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FDG313N

Fairchild Semiconductor
Part Number FDG313N
Manufacturer Fairchild Semiconductor
Description N-Channel Digital FET
Published Mar 30, 2005
Detailed Description FDG313N July 2000 FDG313N Digital FET, N-Channel General Description This N-Channel enhancement mode field effect tran...
Datasheet PDF File FDG313N PDF File

FDG313N
FDG313N

Overview
FDG313N July 2000 FDG313N Digital FET, N-Channel General Description This N-Channel enhancement mode field effect transistor is produced using Fairchild's proprietary, high cell density, DMOS technology.
This very high density process is especially tailored to minimize on-state resistance.
This device has been designed especially for low voltage applications as a replacement for bipolar digital transistor and small signal MOSFET.
Features • 0.
95 A, 25 V.
RDS(on) = 0.
45 Ω @ VGS = 4.
5 V RDS(on) = 0.
60 Ω @ VGS = 2.
7 V.
• • • • Low gate charge (1.
64 nC typical) Very low level gate drive requirements allowing direct operation in 3V circuits (VGS(th) < 1.
5V).
Gate-Source Zener for ESD ruggedness (>6kV Human Body Model).
Compact industry standard SC70-6 surface mount package.
Applications • Load switch • Battery protection • Power management D D S 1 6 2 5 pin 1 SC70-6 D D G 3 4 Absolute Maximum Ratings Symbol VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed TA = 25°C unless otherwise noted Parameter FDG313N 25 (Note 1a) Units V V A W ±8 0.
95 2 0.
75 0.
55 0.
48 -55 to +150 6 Power Dissipation for Single Operation (Note 1a) (Note 1b) (Note 1c) TJ, Tstg ESD Operating and Storage Junction Temperature Range Electrostatic Discharge Rating MIL-STD-883D Human Body Model (100pf / 1500 Ohm) °C kV Thermal Characteristics RθJA Thermal Resistance, Junction-to-Ambient (Note 1c) 260 °C/W Package Outlines and Ordering Information Device Marking .
13 1998 Fairchild Semiconductor Corporation Device FDG313N Reel Size 7’’ Tape Width 8mm Quantity 3000 units FDG313N Rev.
C FDG313N DMOS Electrical Characteristics Symbol BVDSS ∆BVDSS ∆TJ IDSS IGSS TA = 25°C unless otherwise noted Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage Current (Note 2) Test Conditions VGS = 0 V, ID = 250 µA ID = 250 µA, Referenced to 25°C VDS = 20 V, VGS = 0 ...


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