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FDG311N

Fairchild Semiconductor
Part Number FDG311N
Manufacturer Fairchild Semiconductor
Description N-Channel 2.5V Specified PowerTrench MOSFET
Published Mar 30, 2005
Detailed Description FDG311N February 2000 FDG311N N-Channel 2.5V Specified PowerTrench MOSFET General Description This N-Channel MOSFET i...
Datasheet PDF File FDG311N PDF File

FDG311N
FDG311N

Overview
FDG311N February 2000 FDG311N N-Channel 2.
5V Specified PowerTrench MOSFET General Description This N-Channel MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.
These devices are well suited for portable electronics applications.
Features • 1.
9 A, 20 V.
RDS(ON) = 0.
115 Ω @ VGS = 4.
5 V RDS(ON) = 0.
150 Ω @ VGS = 2.
5 V.
• • • Low gate charge (3nC typical).
High performance trench technology for extremely low RDS(ON).
Compact industry standard SC70-6 surface mount package.
Applications • • • Load switch Power management DC/DC converter D D S 1 6 2 5 SC70-6 D D G 3 4 Absolute Maximum Ratings Symbol VDSS VGSS ID PD TJ, Tstg Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed TA = 25 C unless otherwise noted Parameter Ratings 20 (Note 1a) Units V V A W °C ±8 1.
9 6 0.
75 0.
48 -55 to ...


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