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FDG315N

Fairchild Semiconductor
Part Number FDG315N
Manufacturer Fairchild Semiconductor
Description N-Channel Logic Level PowerTrench MOSFET
Published Mar 30, 2005
Detailed Description FDG315N July 2000 FDG315N N-Channel Logic Level PowerTrench MOSFET General Description This N-Channel Logic Level MOS...
Datasheet PDF File FDG315N PDF File

FDG315N
FDG315N

Overview
FDG315N July 2000 FDG315N N-Channel Logic Level PowerTrench MOSFET General Description This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance.
These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.
Features • 2 A, 30 V.
RDS(ON) = 0.
12 Ω @ VGS = 10 V RDS(ON) = 0.
16 Ω @ VGS = 4.
5 V.
• • • Low gate charge (2.
1nC typical).
High performance trench technology for extremely low RDS(ON).
Compact industry standard SC70-6 surface mount package.
Applications • • • DC/DC converter Load switch Power Management D D S 1 6 2 5 SC70-6 D D G 3 4 Absolute Maximum Ratings Symbol VDSS VGSS ID PD TJ, Tstg Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed TA = 25°C unless otherwise noted Parameter Ratings 30 ±20 2 6 0.
75 0.
48 -55 to +150 Units V V A W °C (Note 1a) Power Dissipation for Single Operation (Note 1a) (Note 1b) Operating and Storage Junction Temperature Range Thermal Characteristics RθJA Thermal Resistance, Junction-to-Ambient (Note 1b) 260 °C/W Package Marking and Ordering Information Device Marking .
15 Device FDG315N Reel Size 7’’ Tape Width 8mm Quantity 3000 units 2000 Fairchild Semiconductor International FDG315N Rev.
C FDG315N Electrical Characteristics Symbol BVDSS ∆BVDSS ∆TJ IDSS IGSS IGSS TA = 25°C unless otherwise noted Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage Forward Gate-Body Leakage Reverse (Note 2) Test Conditions VGS = 0 V, ID = 250 µA ID = 250 µA, Referenced to 25°C VDS = 24 V, VGS = 0 V VGS = 16 V, VDS = 0 V VGS = -16 V, VDS = 0 V Min 30 Typ Max Units V Off Characteristics 26 1 100 -100 mV/°C µA nA nA On Characteristics VGS(th) ∆VGS(th) ∆TJ RDS(on) Gat...


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