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FDD6606

Advanced Analogic Technologies
Part Number FDD6606
Manufacturer Advanced Analogic Technologies
Description 30V N-Channel PowerTrench MOSFET
Published Mar 30, 2005
Detailed Description FDD6606 February 2004 FDD6606 30V N-Channel PowerTrench MOSFET General Description This N-Channel MOSFET has been des...
Datasheet PDF File FDD6606 PDF File

FDD6606
FDD6606

Overview
FDD6606 February 2004 FDD6606 30V N-Channel PowerTrench MOSFET General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.
It has been optimized for low gate charge, low RDS( ON) and fast switching speed.
Features • 75 A, 30 V RDS(ON) = 6 mΩ @ VGS = 10 V RDS(ON) = 8 mΩ @ VGS = 4.
5 V • Low gate charge • Fast switching • High performance trench technology for extremely low RDS(ON) Applications • DC/DC converter • Motor Drives D G S D G D-PAK TO-252 (TO-252) TA=25oC unless otherwise noted S Absolute Maximum Ratings Symbol VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous – Pulsed Parameter Ratings 30 ± 20 (Note 3) (Note 1a) (Note 1) (Note 1a) (Note 1b) Units V A W 75 100 71 3.
8 1.
6 –55 to +175 Power Dissipation for Single Operation TJ, TSTG Operating and Storage Junction Temperature Range °C Thermal Characteristics RθJC RθJA RθJA Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Ambient (Note 1) (Note 1a) (Note 1b) 2.
1 40 96 °C/W Package Marking and Ordering Information Device Marking FDD6606 Device FDD6606 Package D-PAK (TO-252) Reel Size 13’’ Tape width 12mm Quantity 2500 units 2004 Fairchild Semiconductor Corporation FDD6606 Rev B (W) FDD6606 Electrical Characteristics Symbol WDSS IAR BVDSS ∆BVDSS ∆TJ IDSS IGSS TA = 25°C unless otherwise noted Parameter Drain-Source Avalanche Energy Drain-Source Avalanche Current Test Conditions Single Pulse, VDD = 15 V, ID = 17 A Min Typ Max 240 17 Units mJ A Drain-Source Avalanche Ratings (Note 2) Off Characteristics Drain–Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate–Body Leakage (Note 2) VGS = 0 V, ID = 250 µA 30 20 10 ±100 V mV/°C µA nA ID = 250 µA, Referenced to 25°C VDS = 24 V, VGS = ± 20 V, VGS = 0 V VD...


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