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FDD6606

Fairchild Semiconductor
Part Number FDD6606
Manufacturer Fairchild Semiconductor
Description 30V N-Channel PowerTrench MOSFET
Published Jan 15, 2016
Detailed Description FDD6606 February 2004 FDD6606 30V N-Channel PowerTrench MOSFET General Description This N-Channel MOSFET has been de...
Datasheet PDF File FDD6606 PDF File

FDD6606
FDD6606

Overview
FDD6606 February 2004 FDD6606 30V N-Channel PowerTrench MOSFET General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.
It has been optimized for low gate charge, low RDS( ON) and fast switching speed.
Applications • DC/DC converter • Motor Drives Features • 75 A, 30 V RDS(ON) = 6 mΩ @ VGS = 10 V RDS(ON) = 8 mΩ @ VGS = 4.
5 V • Low gate charge • Fast switching • High performance trench technology for extremely low RDS(ON) D G S DTO-P-2A5K2 (TO-252) D G S Absolute Maximum Ratings TA=25oC unless otherwise noted Symbol VDSS VGSS ID PD Parameter Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous – Pulsed Power Dissipation for Single Operation (Note 3) (Note 1a) (Note 1) (Note 1a) (Note 1b) TJ, TSTG Operating and Storage Junction Temperature Range Ratings 30 ± 20 75 100 71 3.
8 1.
6 –55 to +175 Thermal Characteristics RθJC Thermal Resistance, Junction-to-Case RθJA Thermal Resistance, Junction-to-Ambient RθJA Thermal Resistance, Junction-to-Ambient (Note 1) (Note 1a) (Note 1b) 2.
1 40 96 Package Marking and Ordering Information Device Marking Device Package FDD6606 FDD6606 D-PAK (TO-252) Reel Size 13’’ Tape width 12mm Units V A W °C °C/W Quantity 2500 units 2004 Fairchild Semiconductor Corporation FDD6606 Rev B (W) FDD6606 Electrical Characteristics Symbol Parameter TA = 25°C unless otherwise noted Test Conditions Min Drain-Source Avalanche Ratings (Note 2) WDSS Drain-Source Avalanche Energy Single Pulse, VDD = 15 V, ID = 17 A IAR Drain-Source Avalanche Current Off Characteristics BVDSS ∆BVDSS ∆TJ IDSS Drain–Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current IGSS Gate–Body Leakage VGS = 0 V, ID = 250 µA ID = 250 µA, Referenced to 25°C VDS = 24 V, VGS = ± 20 V, VGS = 0 V VDS = 0 V On Characteristics (Note 2) VGS(th) Gat...


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