DatasheetsPDF.com

FDD6644

Fairchild Semiconductor
Part Number FDD6644
Manufacturer Fairchild Semiconductor
Description 30V N-Channel PowerTrench MOSFET
Published Mar 30, 2005
Detailed Description FDD6644/FDU6644 April 2001 FDD6644/FDU6644 30V N-Channel PowerTrench MOSFET General Description This N-Channel MOSFET...
Datasheet PDF File FDD6644 PDF File

FDD6644
FDD6644

Overview
FDD6644/FDU6644 April 2001 FDD6644/FDU6644 30V N-Channel PowerTrench MOSFET General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.
It has been optimized for low gate charge, low RDS(ON) and fast switching speed.
Features • 67 A, 30 V.
RDS(ON) = 8.
5 mΩ @ VGS = 10 V RDS(ON) = 10.
5 mΩ @ VGS = 4.
5 V Applications • DC/DC converter • High performance trench technology for extremely low RDS(ON) • Low gate charge (25 nC typical) • High power and current handling capability D D G S I-PAK (TO-251AA) G D S G D-PAK TO-252 (TO-252) S Absolute Maximum Ratings Symbol VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous – Pulsed Maximum Power Dissipation TA=25oC unless otherwise noted Parameter Ratings 30 ±16 (Note 1a) Units V V A W 67 100 68 3.
8 1.
6 -55 to +175 (Note 1) (Note 1a) (Note 1b) TJ, TSTG Operating and Storage Junction Temperature Range °C Thermal Characteristics RθJC RθJA Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient (Note 1) (Note 1b) 2.
2 96 °C/W °C/W Package Marking and Ordering Information Device Marking FDD6644 FDU6644 Device FDD6644 FDU6644 Package D-PAK (TO-252) I-PAK (TO-251) Reel Size 13’’ Tube Tape width 12mm N/A Quantity 2500 units 75 2001 Fairchild Semiconductor Corporation FDD/FDU6644 Rev C(W) FDD6644/FDU6644 Electrical Characteristics Symbol W DSS IAR TA = 25°C unless otherwise noted Parameter Drain-Source Avalanche Energy Drain-Source Avalanche Current Test Conditions Single Pulse, VDD = 15 V, ID=17A Min Typ Max Units 240 17 mJ A Drain-Source Avalanche Ratings (Note 2) Off Characteristics BVDSS ∆BVDSS ∆TJ IDSS IGSSF IGSSR Drain–Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate–Body Leakage, Forward Gate–Body Leakage, Reverse (Note 2) VGS = 0 V, ID = 250 µA ID = 250 µA...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)