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TPC8211

Toshiba
Part Number TPC8211
Manufacturer Toshiba
Description N-Channel MOSFET
Published May 23, 2005
Detailed Description TPC8211 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U−MOS III) TPC8211 Lithium Ion Battery Applications...
Datasheet PDF File TPC8211 PDF File

TPC8211
TPC8211

Overview
TPC8211 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U−MOS III) TPC8211 Lithium Ion Battery Applications Portable Equipment Applications Notebook PC Applications l Low drain−source ON resistance: RDS (ON) = 25 mΩ (typ.
) l High forward transfer admittance: |Yfs| = 7.
0 S (typ.
) l Low leakage current: IDSS = 10 µA (max) (VDS = 30 V) l Enhancement−mode: Vth = 1.
3 to 2.
5 V (VDS = 10 V, ID = 1 mA) Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current DC Pulse (Note 1) (Note 1) Symbol VDSS VDGR VGSS ID IDP PD (1) Rating 30 30 ±20 5.
5 22 1.
5 W PD(2) 1.
1 Unit V V V A Drain power dissipation (t = 1...


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