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AOL1400

Alpha & Omega Semiconductors
Part Number AOL1400
Manufacturer Alpha & Omega Semiconductors
Description N-Channel FET
Published Dec 23, 2006
Detailed Description www.DataSheet4U.com AOL1400 N-Channel Enhancement Mode Field Effect Transistor General Description The AOL1400 uses adv...
Datasheet PDF File AOL1400 PDF File

AOL1400
AOL1400

Overview
www.
DataSheet4U.
com AOL1400 N-Channel Enhancement Mode Field Effect Transistor General Description The AOL1400 uses advanced trench technology to provide excellent R DS(ON), shoot-through immunity and good body diode characteristics.
This device is ideally suited for use as a low side switch in CPU core power conversion.
Standard product AOL1400 is Pb-free (meets ROHS & Sony 259 specifications).
AOL1400L is a Green Product ordering option.
AOL1400 and AOL1400L are electrically identical.
Features VDS (V) = 30V ID = 85A (V GS = 10V) RDS(ON) < 4.
5mΩ (VGS = 10V) RDS(ON) < 5.
5mΩ (VGS = 4.
5V) Ultra SO-8TM Top View Fits SOIC8 footprint ! Bottom tab connected to drain D D G S S G Absolute Maximum Ratings T A=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current B TC=25°C G TC=100°C B ID IDM IDSM IAR C Maximum 30 ±12 85 70 200 17 13 30 145 100 50 2.
1 1.
3 -55 to 175 Units V V Pulsed Drain Current Continuous Drain TA=25°C Current G TA=70°C Avalanche Current C Repetitive avalanche energy L=0.
3mH Power Dissipation Power Dissipation B A A mJ W W °C EAR PD PDSM TJ, TSTG TC=25°C TC=100°C TA=25°C TA=70°C A Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient Maximum Junction-to-Ambient Maximum Junction-to-Case C Symbol A A t ≤ 10s Steady-State Steady-State RθJA RθJC Typ 21 48 1 Max 25 60 1.
5 Units °C/W °C/W °C/W Alpha & Omega Semiconductor, Ltd.
AOL1400 Electrical Characteristics (T J=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) RDS(ON) gFS VSD IS Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current Static Drain-Source On-Resistance VGS=4.
5V, I D=20A Forward Transconductance VDS=5V, ID=20A Diode Forward Voltage IS=1A,VGS=0V Maximum Body-Diode Continuous Current Conditions ID=250 μA, VGS=0V VDS=24V, VGS=0V TJ=55°C ...


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