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AOL1426

Alpha & Omega Semiconductors
Part Number AOL1426
Manufacturer Alpha & Omega Semiconductors
Description N-Channel FET
Published Dec 23, 2006
Detailed Description www.DataSheet4U.com AOL1426 N-Channel Enhancement Mode Field Effect Transistor General Description The AOL1426 uses adv...
Datasheet PDF File AOL1426 PDF File

AOL1426
AOL1426

Overview
www.
DataSheet4U.
com AOL1426 N-Channel Enhancement Mode Field Effect Transistor General Description The AOL1426 uses advanced trench technology to provide excellent RDS(ON), low gate charge.
This device is suitable for use as a high side switch in SMPS and general purpose applications.
Standard Product AOL1426 is Pb-free (meets ROHS & Sony 259 specifications).
AOL1426L is a Green Product ordering option.
AOL1426 and AOL1426L are electrically identical.
Features VDS (V) = 30V ID = 46A (VGS = 10V) RDS(ON) < 10.
5mΩ (VGS = 10V) RDS(ON) < 13.
5mΩ (VGS = 4.
5V) UIS Tested Rg,Ciss,Coss,Crss Tested Ultra SO-8TM Top View D Fits SOIC8 footprint ! G D S Bottom tab connected to drain G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current B Pulsed Drain Current Continuous Drain Current H Avalanche Current C Repetitive avalanche energy L=0.
3mH TC=25°C Power Dissipation B Power Dissipation A C Maximum 30 ±12 46 33 120 15 12 30 135 43 21 4 2.
6 -55 to 175 Units V V A TC=25°C TC=100°C TA=25°C TA=70°C IDSM IAR EAR PD PDSM TJ, TSTG ID IDM A A mJ W W °C TC=100°C TA=25°C TA=70°C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A A Maximum Junction-to-Ambient C Maximum Junction-to-Case Symbol t ≤ 10s Steady-State Steady-State RθJA RθJC Typ 24 53 2.
4 Max 30 64 3.
5 Units °C/W °C/W °C/W Alpha & Omega Semiconductor, Ltd.
AOL1426 Electrical Characteristics (T J=25°C unless otherwise noted) Symbol Parameter Conditions ID=250µA, VGS=0V VDS=24V, VGS=0V TJ=55°C VDS=0V, VGS= ±12V VDS=VGS ID=250µA VGS=10V, VDS=5V VGS=10V, ID=20A RDS(ON) gFS VSD IS Static Drain-Source On-Resistance VGS=4.
5V, ID=20A Forward Transconductance VDS=5V, ID=20A Diode Forward Voltage IS=1A,VGS=0V Maximum Body-Diode Continuous Current TJ=125°C 1 120 8.
5 14.
5 10.
2 40 0.
73 1.
0 46 1210 VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz 330 85 1.
2 22 VGS=10V, VDS=15V, ID...


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