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AOL1408

Alpha & Omega Semiconductors
Part Number AOL1408
Manufacturer Alpha & Omega Semiconductors
Description N-Channel FET
Published Dec 23, 2006
Detailed Description www.DataSheet4U.com AOL1408 N-Channel Enhancement Mode Field Effect Transistor General Description The AOL1408 uses adv...
Datasheet PDF File AOL1408 PDF File

AOL1408
AOL1408

Overview
www.
DataSheet4U.
com AOL1408 N-Channel Enhancement Mode Field Effect Transistor General Description The AOL1408 uses advanced trench technology to provide excellent RDS(ON), shoot-through immunity and body diode characteristics.
This device is ideally suited for use as a low side switch in CPU core power conversion.
Standard Product AOL1408 is Pb-free (meets ROHS & Sony 259 specifications).
AOL1408L is a Green Product ordering option.
AOL1408 and AOL1408L are electrically identical.
Features VDS (V) = 30V ID = 85A (VGS = 10V) RDS(ON) < 4mΩ (VGS = 10V) RDS(ON) < 6mΩ (VGS = 4.
5V) UIS Tested Rg,Ciss,Coss,Crss Tested Ultra SO-8TM Top View D Fits SOIC8 footprint ! D Bottom tab connected to drain S G S G Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current B,G TC=25°C G Maximum 30 ±20 85 73 200 27 22 30 45 100 50 5 3 -55 to 175 Units V V TC=100°C B Pulsed Drain Current Continuous Drain TA=25°C G Current TA=70°C C Avalanche Current Repetitive avalanche energy L=0.
1mH C TC=25°C Power Dissipation B Power Dissipation A ID IDM IDSM IAR EAR PD PDSM A A mJ W W °C Max 25 60 1.
5 Units °C/W °C/W °C/W TC=100°C TA=25°C TA=70°C TJ, TSTG Junction and Storage Temperature Range Thermal Characteristics Parameter A t ≤ 10s Maximum Junction-to-Ambient A Steady-State Maximum Junction-to-Ambient Steady-State Maximum Junction-to-Case C Symbol RθJA RθJC Typ 19.
6 48 1 Alpha & Omega Semiconductor, Ltd.
www.
aosmd.
com AOL1408 Electrical Characteristics (TJ=25°C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) RDS(ON) gFS VSD IS Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current Static Drain-Source On-Resistance VGS=4.
5V, ID=20A Forward Transconductance VDS=5V, ID=20A Diode Forward Voltage IS=1A,VGS=0V Maximum Body-Diode Continuous Current Conditions ID=250µA,...


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