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AOL1420

Alpha & Omega Semiconductors
Part Number AOL1420
Manufacturer Alpha & Omega Semiconductors
Description N-Channel FET
Published Dec 23, 2006
Detailed Description www.DataSheet4U.com AOL1420 N-Channel Enhancement Mode Field Effect Transistor General Description The AOL1420 uses adv...
Datasheet PDF File AOL1420 PDF File

AOL1420
AOL1420

Overview
www.
DataSheet4U.
com AOL1420 N-Channel Enhancement Mode Field Effect Transistor General Description The AOL1420 uses advanced trench technology to provide excellent RDS(ON), low gate charge and low gate resistance.
This device is ideally suited for use as a low side switch in CPU core power conversion.
Standard Product AOL1420 is Pb-free (meets ROHS & Sony 259 specifications).
AOL1420L is a Green Product ordering option.
AOL1420 and AOL1420L are electrically identical.
Ultra SO-8TM Top View Fits SOIC8 footprint ! Bottom tab connected to drain Features VDS (V) = 30V ID = 85A (VGS = 10V) RDS(ON) < 3.
7mΩ (VGS = 10V) RDS(ON) < 5.
5mΩ (VGS = 4.
5V) UIS Tested Rg,Ciss,Coss,Crss Tested D D G S S G Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current B,G Pulsed Drain Current Continuous Drain Current G Avalanche Current C C Maximum 30 ±20 85 63 150 29 27 30 112 100 50 5 3 -55 to 175 Units V V TC=25°C G TC=100°C B TA=25°C TA=70°C ID IDM IDSM IAR EAR PD PDSM TJ, TSTG A A mJ W W °C Repetitive avalanche energy L=0.
1mH TC=25°C Power Dissipation Power Dissipation B TC=100°C TA=25°C TA=70°C A Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient Maximum Junction-to-Ambient Maximum Junction-to-Case C A A Symbol t ≤ 10s Steady-State Steady-State RθJA RθJC Typ 19.
6 50 0.
9 Max 25 60 1.
5 Units °C/W °C/W °C/W Alpha & Omega Semiconductor, Ltd.
www.
aosmd.
com AOL1420 Electrical Characteristics (TJ=25°C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) RDS(ON) gFS VSD IS Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current Static Drain-Source On-Resistance VGS=4.
5V, ID=20A Forward Transconductance VDS=5V, ID=20A Diode Forward Voltage IS=1A,VGS=0V Maximum Body-Diode Continuous Current Conditions ID=250µA, VGS=...


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