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AOL1424

Alpha & Omega Semiconductors
Part Number AOL1424
Manufacturer Alpha & Omega Semiconductors
Description N-Channel MOSFET
Published Oct 24, 2015
Detailed Description AOL1424 N-Channel Enhancement Mode Field Effect Transistor General Description The AOL1424 uses advanced trench technol...
Datasheet PDF File AOL1424 PDF File

AOL1424
AOL1424

Overview
AOL1424 N-Channel Enhancement Mode Field Effect Transistor General Description The AOL1424 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.
5V,while retaining a 20V VGS(MAX) rating.
It is ESD protected.
This device is suitable for use as a load switch.
-RoHS Compliant -Halogen and Antimony Free Green Device* Features VDS (V) = 30V ID = 70A (VGS = 10V) RDS(ON) < 6.
5mΩ (VGS = 10V) RDS(ON) < 9.
8mΩ (VGS = 4.
5V) ESD Protected UIS Tested Rg,Ciss,Coss,Crss Tested Ultra SO-8TM Top View S G D Bottom tab connected to drain G Absolute Maximum Ratings T A=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain TC=25°C Current B TC=100°C Pulsed Drain Current C ID IDM Continuous Drain Current A Avalanche Current H TA=25°C TA=70°C Repetitive avalanche energy L=0.
3mH H IDSM IAR EAR TC=25°C Power Dissipation B TC=100°C PD TA=25°C Power Dissipation A TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG Maximum 30 ±20 70 50 120 15 12 30 135 50 25 2.
2 1.
5 -55 to 175 D S Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Case D t ≤ 10s Steady-State Steady-State Symbol RθJA RθJC Typ 20 45 2.
5 Max 24 55 3.
0 Units V V A A A mJ W W °C Units °C/W °C/W °C/W Alpha & Omega Semiconductor, Ltd.
www.
aosmd.
com AOL1424 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions STATIC PARAMETERS BVDSS IDSS IGSS VGS(th) ID(ON) RDS(ON) gFS VSD IS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current ID=250µA, VGS=0V VDS=30V, VGS=0V Gate-Body leakage current Gate Threshold Voltage On state drain current Static Drain-Source On-Resistance VDS=0V, VGS= ±16V VDS=VGS ID=250µA VGS=10V, VDS=5V VGS=10V, ID=20A VGS=4.
5V, ID=20A Forward Transconductance VDS=5V, ID=20A Diode Forward Voltage IS=1A,VGS=0V Maximum Body-Diode Contin...


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