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AOL1401

Alpha & Omega Semiconductors
Part Number AOL1401
Manufacturer Alpha & Omega Semiconductors
Description P-Channel FET
Published Dec 23, 2006
Detailed Description www.DataSheet4U.com AOL1401 P-Channel Enhancement Mode Field Effect Transistor General Description The AOL1401 uses adv...
Datasheet PDF File AOL1401 PDF File

AOL1401
AOL1401

Overview
www.
DataSheet4U.
com AOL1401 P-Channel Enhancement Mode Field Effect Transistor General Description The AOL1401 uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate charge with a 25V gate rating.
This device is suitable for use as a load switch or in PWM applications.
It is ESD protected.
Standard Product AOL1401 is Pbfree (meets ROHS & Sony 259 specifications).
AOL1401L is a Green Product ordering option.
AOL1401 and AOL1401L are electrically identical.
Ultra SO-8TM Top View Fits SOIC8 footprint ! D Features VDS (V) = -38V ID = -85A RDS(ON) < 8.
5mΩ (VGS = -10V) RDS(ON) < 10mΩ (VGS = -4.
5V) ESD Rating: 3000V HBM D Bottom tab connected to drain G S S G Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current G Pulsed Drain Current Continuous Drain Current G Power Dissipation B Power Dissipation A C Maximum -38 ±25 -85 -62 -120 -12 -9 100 50 2.
1 1.
3 -55 to 175 Units V V TC=25°C TC=100°C TA=25°C TA=70°C TC=25°C TC=100°C TA=25°C TA=70°C IDSM PD PDSM TJ, TSTG ID IDM A W W °C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Case B Symbol t ≤ 10s Steady-State Steady-State RθJA RθJC Typ 21 48 1 Max 25 60 1.
5 Units °C/W °C/W °C/W Alpha & Omega Semiconductor, Ltd.
AOL1401 Electrical Characteristics (T J=25°C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) RDS(ON) gFS VSD IS Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current Static Drain-Source On-Resistance VGS=-10V, ID=-20A VDS=-5V, ID=-20A Forward Transconductance Diode Forward Voltage IS=-1A,VGS=0V Maximum Body-Diode Continuous Current Conditions ID=-250 µA, VGS=0V VDS=-30V, VGS=0V TJ=55°C VDS=0V, VGS=±20V VDS=0V, VGS=±25V VDS=VGS ID=-250 µA VGS=-10V, VDS=-5V...


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