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AOL1422

Alpha & Omega Semiconductors
Part Number AOL1422
Manufacturer Alpha & Omega Semiconductors
Description N-Channel MOSFET
Published Oct 24, 2015
Detailed Description AOL1422 N-Channel Enhancement Mode Field Effect Transistor General Description The AOL1422 uses advanced trench technol...
Datasheet PDF File AOL1422 PDF File

AOL1422
AOL1422

Overview
AOL1422 N-Channel Enhancement Mode Field Effect Transistor General Description The AOL1422 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.
This device is ESD protected and it is suitable for use in load switching and general purpose applications.
-RoHS Compliant -Halogen and Antimony Free Green Device* Ultra SO-8TM Top View Features VDS (V) = 30V ID = 85A (VGS = 10V) RDS(ON) < 3.
7mΩ (VGS = 10V) RDS(ON) < 5.
4mΩ (VGS = 4.
5V) Rg,Ciss,Coss,Crss Tested D S G D Bottom tab connected to drain G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain TC=25°C Current B,H TC=100°C Pulsed Drain Current C ID IDM Continuous Drain Current G TA=25°C TA=70°C IDSM TC=25°C Power Dissipation B TC=100°C PD TA=25°C Power Dissipation A TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG Maximum 30 ±20 85 85 150 19 15 100 50 2.
08 1.
3 -55 to 175 Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Case D t ≤ 10s Steady-State Steady-State Symbol RθJA RθJC Typ 19.
6 50 0.
9 Max 25 60 1.
5 Alpha & Omega Semiconductor, Ltd.
Units V V A W °C Units °C/W °C/W °C/W www.
aosmd.
com AOL1422 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=250µA, VGS=0V 30 V IDSS Zero Gate Voltage Drain Current VDS=30V, VGS=0V TJ=55°C 1 5 µA IGSS Gate-Body leakage current VDS=0V, VGS= ±16V 10 VGS(th) Gate Threshold Voltage VDS=VGS ID=250µA 1 1.
7 3 V ID(ON) On state drain current VGS=10V, VDS=5V 150 A VGS=10V, ID=20A 3 3.
7 RDS(ON) Static Drain-Source On-Resistance TJ=125°C 4.
2 5.
2 mΩ VGS=4.
5V, ID=20A 4.
4 5.
4 gFS Forward Transconductance VDS=5V, ID=20A 71 S VSD Diode Forward Voltage IS=1A,VGS=0V 0.
69 1 V IS Maximum Body-Diode Contin...


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