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AOL1414

Alpha & Omega Semiconductors
Part Number AOL1414
Manufacturer Alpha & Omega Semiconductors
Description N-Channel FET
Published Dec 23, 2006
Detailed Description www.DataSheet4U.com AOL1414 N-Channel Enhancement Mode Field Effect Transistor General Description The AOL1414 uses adv...
Datasheet PDF File AOL1414 PDF File

AOL1414
AOL1414

Overview
www.
DataSheet4U.
com AOL1414 N-Channel Enhancement Mode Field Effect Transistor General Description The AOL1414 uses advanced trench technology to provide excellent R DS(ON), low gate chargeand low gate resistance.
This device is ideally suited for use as a high side switch in CPU core power conversion.
Standard Product AOL1414 is Pb-free (meets ROHS & Sony 259 specifications).
AOL1414L is a Green Product ordering option.
AOL1414 and AOL1414L are electrically identical.
Ultra SO-8TM Top View Fits SOIC8 footprint ! Features VDS (V) = 30V ID = 85A (VGS = 10V) RDS(ON) < 6.
5mΩ (VGS = 10V) RDS(ON) < 7.
5mΩ (VGS = 4.
5V) UIS Tested Rg,Ciss,Coss,Crss Tested D D Bottom tab connected to drain G S S G Absolute Maximum Ratings T A=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current B TC=25°C TC=100°C ID IDM IDSM IAR C Maximum 30 ±12 85 70 200 21 17 30 135 100 50 5 3 -55 to 175 Units V V Pulsed Drain Current Continuous Drain TA=25°C Current G TA=70°C Avalanche Current C Repetitive avalanche energy L=0.
3mH Power Dissipation Power Dissipation B A A mJ W W °C EAR PD PDSM TJ, TSTG TC=25°C TC=100°C TA=25°C TA=70°C A Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient Maximum Junction-to-Ambient Maximum Junction-to-Case C Symbol A A t ≤ 10s Steady-State Steady-State RθJA RθJC Typ 19.
5 48 1 Max 25 60 1.
5 Units °C/W °C/W °C/W Alpha & Omega Semiconductor, Ltd.
www.
aosmd.
com AOL1414 Electrical Characteristics (TJ=25°C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) RDS(ON) gFS VSD IS Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current Static Drain-Source On-Resistance VGS=4.
5V, ID=20A Forward Transconductance VDS=5V, ID=20A Diode Forward Voltage IS=1A,VGS=0V Maximum Body-Diode Continuous Current Conditions ID=250µA, VGS=0V VDS...


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