N-channel MOSFET. NX3020NAKW Datasheet

NX3020NAKW MOSFET. Datasheet pdf. Equivalent

NX3020NAKW Datasheet
Recommendation NX3020NAKW Datasheet
Part NX3020NAKW
Description N-channel MOSFET
Feature NX3020NAKW; NX3020NAKW 30 V, 180 mA N-channel Trench MOSFET 29 October 2013 Product data sheet 1. General desc.
Manufacture nexperia
Datasheet
Download NX3020NAKW Datasheet




nexperia NX3020NAKW
NX3020NAKW
30 V, 180 mA N-channel Trench MOSFET
29 October 2013
Product data sheet
1. General description
N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT323 (SC-70)
Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
2. Features and benefits
Very fast switching
Trench MOSFET technology
ESD protection
Low threshold voltage
3. Applications
Relay driver
High-speed line driver
Low-side loadswitch
Switching circuits
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
Min Typ Max Unit
VDS drain-source voltage Tj = 25 °C
- - 30 V
VGS gate-source voltage
-20 -
20 V
ID
drain current
VGS = 10 V; Tamb = 25 °C
[1] - - 180 mA
Static characteristics
RDSon
drain-source on-state VGS = 10 V; ID = 100 mA; Tj = 25 °C
resistance
- 2.7 4.5 Ω
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm2.



nexperia NX3020NAKW
Nexperia
NX3020NAKW
30 V, 180 mA N-channel Trench MOSFET
5. Pinning information
Table 2. Pinning information
Pin Symbol Description
1 G gate
2 S source
3 D drain
Simplified outline
3
Graphic symbol
D
12
SC-70 (SOT323)
G
S
017aaa255
6. Ordering information
Table 3. Ordering information
Type number
Package
Name
NX3020NAKW
SC-70
Description
plastic surface-mounted package; 3 leads
Version
SOT323
7. Marking
Table 4. Marking codes
Type number
NX3020NAKW
Marking code
[1]
%3A
[1] % = placeholder for manufacturing site code
8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
VDS drain-source voltage Tj = 25 °C
VGS gate-source voltage
ID drain current
VGS = 10 V; Tamb = 25 °C
VGS = 10 V; Tamb = 100 °C
IDM peak drain current
Tamb = 25 °C; single pulse; tp ≤ 10 µs
Ptot
total power dissipation
Tamb = 25 °C
[1]
[1]
[2]
[1]
NX3020NAKW
Product data sheet
All information provided in this document is subject to legal disclaimers.
29 October 2013
Min Max Unit
- 30 V
-20 20
V
- 180 mA
- 110 mA
- 720 mA
- 260 mW
- 300 mW
© Nexperia B.V. 2017. All rights reserved
2 / 15



nexperia NX3020NAKW
Nexperia
NX3020NAKW
30 V, 180 mA N-channel Trench MOSFET
Symbol
Parameter
Tj junction temperature
Tamb
ambient temperature
Tstg storage temperature
Source-drain diode
IS source current
Conditions
Tsp = 25 °C
Tamb = 25 °C
Min Max Unit
- 1100 mW
-55 150 °C
-55 150 °C
-65 150 °C
[1] -
180 mA
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm2.
[2] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
120
017aaa001
120
017aaa002
Pder
(%)
Ider
(%)
80 80
40 40
0
- 75 - 25
25
75 125 175
Tamb (°C)
Fig. 1. Normalized total power dissipation as a
function of ambient temperature
0
- 75 - 25
25
75 125 175
Tamb (°C)
Fig. 2. Normalized continuous drain current as a
function of ambient temperature
NX3020NAKW
Product data sheet
All information provided in this document is subject to legal disclaimers.
29 October 2013
© Nexperia B.V. 2017. All rights reserved
3 / 15







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