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FDV303N

ON Semiconductor
Part Number FDV303N
Manufacturer ON Semiconductor
Description N-Channel Digital FET
Published Mar 23, 2020
Detailed Description Digital FET, N-Channel FDV303N General Description These N−Channel enhancement mode field effect transistors are produ...
Datasheet PDF File FDV303N PDF File

FDV303N
FDV303N

Overview
Digital FET, N-Channel FDV303N General Description These N−Channel enhancement mode field effect transistors are produced using ON Semiconductor’s proprietary, high cell density, DMOS technology.
This very high density process is tailored to minimize on−state resistance at low gate drive conditions.
This device is designed especially for application in battery circuits using either one lithium or three cadmium or NMH cells.
It can be used as an inverter or for high−efficiency miniature discrete DC/DC conversion in compact portable electronic devices like cellular phones and pagers.
This device has excellent on−state resistance even at gate drive voltages as low as 2.
5 V.
Features • 25 V, 0...


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