FDV303N Digital FET Datasheet

FDV303N Datasheet, PDF, Equivalent


Part Number

FDV303N

Description

N-Channel Digital FET

Manufacture

ON Semiconductor

Total Page 7 Pages
Datasheet
Download FDV303N Datasheet


FDV303N
Digital FET, N-Channel
FDV303N
General Description
These NChannel enhancement mode field effect transistors are
produced using ON Semiconductor’s proprietary, high cell density,
DMOS technology. This very high density process is tailored to
minimize onstate resistance at low gate drive conditions. This device
is designed especially for application in battery circuits using either
one lithium or three cadmium or NMH cells. It can be used as an
inverter or for highefficiency miniature discrete DC/DC conversion
in compact portable electronic devices like cellular phones and pagers.
This device has excellent onstate resistance even at gate drive
voltages as low as 2.5 V.
Features
25 V, 0.68 A Continuous, 2 A Peak
RDS(ON) = 0.45 Ω @ VGS = 4.5 V
RDS(ON) = 0.6 Ω @ VGS= 2.7 V
Very Low Level Gate Drive Requirements Allowing Direct Operation
in 3 V Circuits, VGS(th) < 1 V
GateSource Zener for ESD Ruggedness, > 6 kV Human Body
Model
Compact Industry Standard SOT23 Surface Mount Package
This Device is PbFree, Halogen Free/BFR Free and is RoHS
Compliant
www.onsemi.com
SOT23 (TO236)
CASE 31808
STYLE 21
MARKING DIAGRAM
Drain
3
A303MG
G
1
Gate
2
Source
Aor blank = One/two character Loacation Code
303 = Specific Device Code
M = Date Code
G = PbFree Package
(Note: Microdot may be in either location)
* Location code can be blank or with characters
indicating manufacturing location
* Date Code orientation and overbar may vary
depending upon manufacturing location.
PIN ASSIGNMENT
D
GS
SOT23
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of
this data sheet.
© Semiconductor Components Industries, LLC, 1997
March, 2020 Rev. 5
1
Publication Order Number:
FDV303N/D

FDV303N
FDV303N
MOSFET MAXIMUM RATINGS TA = 25°C unless otherwise noted
Symbol
Parameter
VDSS
VGSS
ID
DrainSource Voltage, Power Supply Voltage
GateSource Voltage, VIN
Drain/Output Current
Continuous
Pulsed
PD Maximum Power Dissipation
TJ, TSTG
ESD
Operating and Storage Temperature Range
Electrostatic Discharge Rating MILSTD883D Human Body Model
(100 pf / 1500 W)
FDV303N
25
8
0.68
2
0.35
55 to 150
6.0
Units
V
V
A
W
°C
kV
THERMAL CHARACTERISTICS
Symbol
Parameter
RθJA
Thermal Resistance, JunctiontoAmbient
Ratings
357
Units
°C/W
ORDERING INFORMATION
Device
Package
Shipping
FDV303N
SOT23
Case 31808
3000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
www.onsemi.com
2


Features Digital FET, N-Channel FDV303N General Description These N−Channel enhancem ent mode field effect transistors are p roduced using ON Semiconductor’s prop rietary, high cell density, DMOS techno logy. This very high density process is tailored to minimize on−state resist ance at low gate drive conditions. This device is designed especially for appl ication in battery circuits using eithe r one lithium or three cadmium or NMH c ells. It can be used as an inverter or for high−efficiency miniature discret e DC/DC conversion in compact portable electronic devices like cellular phones and pagers. This device has excellent on−state resistance even at gate driv e voltages as low as 2.5 V. Features 25 V, 0.68 A Continuous, 2 A Peak ♦ RDS(ON) = 0.45 Ω @ VGS = 4.5 V ♦ RD S(ON) = 0.6 Ω @ VGS= 2.7 V • Very Lo w Level Gate Drive Requirements Allowin g Direct Operation in 3 V Circuits, VGS (th) < 1 V • Gate−Source Zener for ESD Ruggedness, > 6 kV Human Body Model • Compact Industry Standard SOT−23 Surface Moun.
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