PowerTrench MOSFET. FDG312P Datasheet

FDG312P Datasheet PDF, Equivalent


Part Number

FDG312P

Description

P-Channel 2.5V Specified PowerTrench MOSFET

Manufacture

Fairchild Semiconductor

Total Page 8 Pages
PDF Download
Download FDG312P Datasheet PDF


FDG312P Datasheet
February 1999
FDG312P
P-Channel 2.5V Specified PowerTrenchMOSFET
General Description
Features
This P-Channel MOSFET is produced using Fairchild
Semiconductor's advanced PowerTrench process that
has been especially tailored to minimize the on-state
resistance and yet maintain low gate charge for
superior switching performance. These devices are
well suited for portable electronics applications.
Applications
Load switch
Battery protection
Power management
-1.2 A, -20 V. RDS(on) = 0.18 @ VGS = -4.5 V
RDS(on) = 0.25 @ VGS = -2.5 V.
Low gate charge (3.3 nC typical).
High performance trench technology for extremely
low RDS(ON).
Compact industry standard SC70-6 surface mount
package.
S
D
D
SC70-6
G
D
D
16
25
34
Absolute Maximum Ratings TA = 25°C unless otherwise noted
Symbol
Parameter
VDSS
VGSS
ID
PD
Drain-Source Voltage
Gate-Source Voltage
Drain Current - Continuous
- Pulsed
Power Dissipation for Single Operation
(Note 1)
(Note 1a)
(Note 1b)
(Note 1c)
TJ, Tstg
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA
Thermal Resistance, Junction-to-Ambient
(Note 1)
Package Outlines and Ordering Information
Device Marking
Device
Reel Size
.12
FDG312P
7’’
Ratings
-20
±8
-1.2
-6
0.75
0.55
0.48
-55 to +150
260
Tape Width
8mm
Units
V
V
A
W
°C
°C/W
Quantity
3000 units
©1999 Fairchild Semiconductor Corporation
FDG312P Rev. C

FDG312P Datasheet
DMOS Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
VGS = 0 V, ID = -250 µA
-20
V
BVDSS
TJ
IDSS
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
ID = -250 µA, Referenced to 25°C
VDS = -16 V, VGS = 0 V
-19 mV/°C
-1 µA
IGSSF
Gate-Body Leakage Current, Forward VGS = 8 V, VDS = 0 V
100 nA
IGSSR
Gate-Body Leakage Current, Reverse VGS = -8 V, VDS = 0 V
-100 nA
On Characteristics (Note 2)
VGS(th)
Gate Threshold Voltage
VGS(th)
TJ
RDS(on)
Gate Threshold Voltage
Temperature Coefficient
Static Drain-Source
On-Resistance
ID(on) On-State Drain Current
gFS Forward Transconductance
VDS = VGS, ID = -250 µA
-0.4
ID = -250 µA, Referenced to 25°C
-0.9
2.5
-1.5 V
mV/°C
VGS = -4.5 V, ID = -1.2 A
0.135 0.18
VGS = -4.5 V, ID = -1.2 A @125°C
0.200 0.29
VGS = -2.5 V, ID = -1 A
0.187 0.25
VGS = -4.5 V, VDS = -5 V
-3
VDS = -5 V, ID = -1.2 A
3.8
A
S
Dynamic Characteristics
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
VDS = -10 V, VGS = 0 V,
f = 1.0 MHz
330 pF
80 pF
35 pF
Switching Characteristics
td(on) Turn-On Delay Time
tr Turn-On Rise Time
td(off) Turn-Off Delay Time
tf Turn-Off Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
(Note 2)
VDD = -5 V, ID = -0.5 A,
VGS = -4.5 V, RGEN = 6
VDS = -10 V, ID = -1.2 A,
VGS = -4.5 V
7 15
12 22
16 26
5 12
3.3 5
0.8
0.7
ns
ns
ns
ns
nC
nC
nC
Drain-Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain-Source Diode Forward Current
-0.6 A
VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = -0.6 A (Note 2)
-0.83 -1.2
V
Notes:
1. RθJA is the sum of the junction-to-case and case-to-ambient resistance where the case thermal reference is defined as the solder mounting surface of the
drain pins. RθJC is guaranteed by design while RθJA is determined by the user's board design.
a) 170°C/W when
mounted on a 1 in2
pad of 2oz copper.
b) 225°C/W when
mounted on a half
of package sized 2oz.
copper.
c) 260°C/W when
mounted on a minimum
pad of 2oz copper.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width 300 µs, Duty Cycle 2.0%
FDG312P Rev. C


Features Datasheet pdf FDG312P February 1999 FDG312P P-Channe l 2.5V Specified PowerTrench™ MOSFET General Description This P-Channel MOSF ET is produced using Fairchild Semicond uctor's advanced PowerTrench process th at has been especially tailored to mini mize the on-state resistance and yet ma intain low gate charge for superior swi tching performance. These devices are w ell suited for portable electronics app lications. Features • -1.2 A, -20 V. RDS(on) = 0.18 Ω @ VGS = -4.5 V RDS( on) = 0.25 Ω @ VGS = -2.5 V. • • Low gate charge (3.3 nC typical). Hig h performance trench technology for ext remely low RDS(ON). Compact industry st andard SC70-6 surface mount package. A pplications • Load switch • Battery protection • Power management • D D S 1 6 2 5 SC70-6 D D G 3 4 Absolute Maximum Ratings Symbol VDSS VGSS ID PD Drain-Source Voltage Gate-So urce Voltage Drain Current - Continuous - Pulsed TA = 25°C unless otherwise noted Parameter Ratings -20 (Note 1) Units V V A W ±8 -1.2 -6 0.75 0.55 0.48 -55.
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