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TPC6104

Toshiba Semiconductor
Part Number TPC6104
Manufacturer Toshiba Semiconductor
Description P-Channel MOSFET
Published Mar 16, 2010
Detailed Description TPC6104 www.DataSheet4U.com TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSIII) TPC6104 Notebook PC A...
Datasheet PDF File TPC6104 PDF File

TPC6104
TPC6104

Overview
TPC6104 www.
DataSheet4U.
com TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSIII) TPC6104 Notebook PC Applications Portable Equipment Applications • • • • Low drain-source ON resistance: RDS (ON) = 33 mΩ (typ.
) High forward transfer admittance: |Yfs| = 12 S (typ.
) Low leakage current: IDSS = −10 µA (max) (VDS = −20 V) Enhancement mode: Vth = −0.
5 to −1.
2 V (VDS = −10 V, ID = −200 µA) Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current DC Pulse (Note 1) (Note 1) (t = 5 s) (Note 2a) (t = 5 s) (Note 2b) Symbol VDSS VDGR VGSS ID IDP PD PD EAS IAR (Note 4) EAR Tch Tstg Rating −20 −20 ±8 −5.
5...


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