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FDD6676

Fairchild Semiconductor
Part Number FDD6676
Manufacturer Fairchild Semiconductor
Description 30V N-Channel PowerTrench MOSFET
Published Mar 30, 2005
Detailed Description FDD6676 April 2001 FDD6676 30V N-Channel PowerTrench MOSFET General Description This N-Channel MOSFET has been design...
Datasheet PDF File FDD6676 PDF File

FDD6676
FDD6676

Overview
FDD6676 April 2001 FDD6676 30V N-Channel PowerTrench MOSFET General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.
It has been optimized for low gate charge, low RDS( ON) and fast switching speed.
extremely low RDS(ON) in a small package.
Features • 78 A, 30 V RDS(ON) = 7.
5 mΩ @ VGS = 10 V RDS(ON) = 8.
5 mΩ @ VGS = 4.
5 V • Low gate charge • Fast Switching • High performance trench technology for extremely low RDS(ON) Applications • DC/DC converter • Motor Drives D D G S TO-252 S G Absolute Maximum Ratings Symbol VDSS VGSS ID PD TA=25oC unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous – Pulsed Power Dissipation for Single Operation (Note 3) (Note 1a) (Note 1) (Note 1a) (Note 1b) Ratings 30 ±16 78 100 83 3.
8 1.
6 -55 to +175 Units V V A W TJ, TSTG Operating and Storage Junction Temperature Range °C Thermal Characteristics RθJC RθJA RθJA Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Ambient (Note 1) (Note 1a) (Note 1b) 1.
8 40 96 °C/W °C/W °C/W Package Marking and Ordering Information Device Marking FDD6676 Device FDD6676 Reel Size 13’’ Tape width 12mm Quantity 2500 units 2001 Fairchild Semiconductor Corporation FDD6676 Rev C(W) FDD6676 Electrical Characteristics Symbol W DSS IAR TA = 25°C unless otherwise noted Parameter Drain-Source Avalanche Energy Drain-Source Avalanche Current Test Conditions Single Pulse, VDD = 15 V, ID=21A Min Typ Max Units 370 21 mJ A Drain-Source Avalanche Ratings (Note 2) Off Characteristics BVDSS ∆BVDSS ∆TJ IDSS IGSSF IGSSR Drain–Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate–Body Leakage, Forward Gate–Body Leakage, Reverse (Note 2) VGS = 0 V, ID = 250 µA ID = 250 µA,Referenced to 25°C VDS = 24 V, VGS = 16...


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