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FDD6688

Fairchild Semiconductor
Part Number FDD6688
Manufacturer Fairchild Semiconductor
Description 30V N-Channel MOSFET
Published Mar 30, 2005
Detailed Description FDD6688/FDU6688 March 2015 FDD6688/FDU6688 30V N-Channel PowerTrench® MOSFET General Description This N-Channel MOSFE...
Datasheet PDF File FDD6688 PDF File

FDD6688
FDD6688

Overview
FDD6688/FDU6688 March 2015 FDD6688/FDU6688 30V N-Channel PowerTrench® MOSFET General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.
It has been optimized for low gate charge, low RDS( ON) and fast switching speed.
Applications • DC/DC converter • Motor Drives Features • 84 A, 30 V.
RDS(ON) = 5 mΩ @ VGS = 10 V RDS(ON) = 6 mΩ @ VGS = 4.
5 V • Low gate charge • Fast switching • High performance trench technology for extremely low RDS(ON) D G S DTO-P-2A5K2 (TO-252) GDS I-PAK (TO-251AA) D G S Absolute Maximum Ratings TA=25oC unless otherwise noted Symbo l VDSS VGSS ID PD Parameter Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous – Pulsed Power Dissipation for Single Operation (Note 3) (Note 1a) (Note 1) (Note 1a) (Note 1b) TJ, TSTG Operating and Storage Junction Temperature Range Ratings 30 ±20 84 100 83 3.
8 1.
6 –55 to +175 Thermal Characteristics RθJC Thermal Resistance, Junction-to-Case (Note 1) 1.
8 RθJA Thermal Resistance, Junction-to-Ambient (Note 1a) 40 (Note 1b) 96 Package Marking and Ordering Information Device Marking Device Package Reel Size FDD6688 FDD6688 D-PAK (TO-252) 13’’ FDU6688 FDU6688 I-PAK (TO-251) Tube Tape width 16mm N/A Units V A W °C °C/W Quantity 2500 units 75 ©2004 Fairchild Semiconductor Corporation FDD6688/FDU6688 Rev.
6.
1 FDD6688/FDU6688 Electrical Characteristics Symbol Parameter TA = 25°C unless otherwise noted Test Conditions Drain-Source Avalanche Ratings (Note 2) WDSS Drain-Source Avalanche Energy Single Pulse, VDD = 15 V, ID = 21A IAR Drain-Source Avalanche Current Off Characteristics BVDSS Drain–Source Breakdown Voltage ∆BVDSS ∆TJ IDSS Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current IGSS Gate–Body Leakage VGS = 0 V, ID = 250 µA ID = 250 µA, Referenced to 25°C VDS = 24 V, VGS = ±20 V, VGS ...


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