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TPC8202

Toshiba Semiconductor
Part Number TPC8202
Manufacturer Toshiba Semiconductor
Description N-Channel MOSFET
Published Apr 16, 2005
Detailed Description TPC8202 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSVI) TPC8202 Lithium Ion Battery Applications P...
Datasheet PDF File TPC8202 PDF File

TPC8202
TPC8202

Overview
TPC8202 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSVI) TPC8202 Lithium Ion Battery Applications Portable Equipment Applications Notebook PCs l 2.
5-V Gate drive l Small footprint due to small and thin package l Low drain−source ON resistance l Low leakage current l Enhancement−mode : RDS (ON) = 41 mΩ (typ.
) l High forward transfer admittance : |Yfs| = 9 S (typ.
) : IDSS = 10 µA (max) (VDS = 20 V) : Vth = 0.
5~1.
1 V (VDS = 10 V, ID = 200 µA) Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Drain-gate voltage (RGS = 20kΩ) Gate-source voltage Drain curren DC Pulse (Note 1) (Note 1) Symbol VDSS VDGR VGSS ID IDP PD (1) Rating 20 20 ±12 5 20 1.
5 W PD(2...


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