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TPC8206

Toshiba Semiconductor
Part Number TPC8206
Manufacturer Toshiba Semiconductor
Description N-Channel MOSFET
Published Apr 16, 2005
Detailed Description TPC8206 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSII) TPC8206 Lithium Ion Battery Applications N...
Datasheet PDF File TPC8206 PDF File

TPC8206
TPC8206

Overview
TPC8206 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSII) TPC8206 Lithium Ion Battery Applications Notebook PC Applications Portable Equipment Applications · · · · · Small footprint due to small and thin package Low drain-source ON resistance: RDS (ON) = 40 mΩ (typ.
) High forward transfer admittance: |Yfs| = 7.
0 S (typ.
) Low leakage current: IDSS = 10 µA (max) (VDS = 60 V) Enhancement-mode: Vth = 1.
3 to 2.
5 V (VDS = 10 V, ID = 1 mA) Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kW) Gate-source voltage Drain current Drain power dissipation (t = 10 s) (Note 2a) Drain power dissipation (t = 10 s) (Note 2b) DC Pulse (N...


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