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TPC8210

Toshiba Semiconductor
Part Number TPC8210
Manufacturer Toshiba Semiconductor
Description N-Channel MOSFET
Published Jul 19, 2010
Detailed Description TPC8210 www.DataSheet4U.com TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U−MOS III) TPC8210 Lithium Ion ...
Datasheet PDF File TPC8210 PDF File

TPC8210
TPC8210

Overview
TPC8210 www.
DataSheet4U.
com TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U−MOS III) TPC8210 Lithium Ion Battery Applications Portable Equipment Applications Notebook PC Applications z Low drain−source ON resistance: RDS (ON) = 11 mΩ (typ.
) z High forward transfer admittance: |Yfs| = 13 S (typ.
) z Low leakage current: IDSS = 10 µA (max) (VDS = 30 V) z Enhancement mode: Vth = 1.
3 to 2.
5 V (VDS = 10 V, ID = 1 mA) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current DC Pulse (Note 1) (Note 1) Symbol VDSS VDGR VGSS ID IDP PD (1) Rating 30 30 ±20 8 32 1.
5 W PD(2) 1.
1 Unit V V V A JEDE...


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