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TPC6130

Toshiba Semiconductor
Part Number TPC6130
Manufacturer Toshiba Semiconductor
Description MOSFETs
Published Aug 27, 2014
Detailed Description TPC6130 MOSFETs Silicon P-Channel MOS (U-MOS) TPC6130 1. Applications • • Lithium-Ion Secondary Batteries Power Manage...
Datasheet PDF File TPC6130 PDF File

TPC6130
TPC6130

Overview
TPC6130 MOSFETs Silicon P-Channel MOS (U-MOS) TPC6130 1.
Applications • • Lithium-Ion Secondary Batteries Power Management Switches 2.
Features (1) (2) (3) (4) Small footprint due to small and thin package Low drain-source on-resistance: RDS(ON) = 86 mΩ (typ.
) (VGS = -4.
5 V) Low leakage current: IDSS = -10 µA (max) (VDS = -20 V) Enhancement mode: Vth = -0.
5 to -1.
2 V (VDS = -10 V, ID = -0.
2 mA) 3.
Packaging and Internal Circuit 1, 2, 5, 6: Drain 3: Gate 4: Source VS-6 4.
Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Drain-source voltage Gate-source voltage Drain current (DC) Drain current (pulsed) Power dissipation Power dissipation Single-pulse...


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