Philips Semiconductors
Product specification
N-channel enhancement mode TrenchMOS™
transistor
FEATURES
• ’Trench’ technology • Low on-state resistance • Fast switching • High thermal cycling performance • Low thermal resistance
BSP100
SYMBOL
d
QUICK REFERENCE DATA
VDSS = 30 V ID = 6 A
g
RDS(ON) ≤ 100 mΩ (VGS = 10 V) RDS(ON) ≤ 200 mΩ (VGS = 4.
5 V)
s
GENERAL DESCRIPTION
N-channel enhancement mode field-effect
transistor in a plastic envelope using ’trench’ technology.
Applications:• Motor and relay drivers • d.
c.
to d.
c.
converters • Logic level translator The BSP100 is supplied in the SOT223 surface mounting package.
PINNING
PIN 1 2 3 4 gate drain source drain (tab) DESCRIPTION
SOT22...