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BSP122

NXP
Part Number BSP122
Manufacturer NXP
Description N-channel enhancement mode vertical D-MOS transistor
Published Mar 23, 2005
Detailed Description DISCRETE SEMICONDUCTORS DATA SHEET BSP122 N-channel enhancement mode vertical D-MOS transistor Product specification Fi...
Datasheet PDF File BSP122 PDF File

BSP122
BSP122

Overview
DISCRETE SEMICONDUCTORS DATA SHEET BSP122 N-channel enhancement mode vertical D-MOS transistor Product specification File under Discrete Semiconductors, SC13b April 1995 Philips Semiconductors Product specification N-channel enhancement mode vertical D-MOS transistor FEATURES • Direct interface to C-MOS, TTL, etc.
• High-speed switching • No secondary breakdown.
DESCRIPTION N-channel enhancement mode vertical D-MOS transistor in a SOT223 envelope and intended for use as a line current interruptor in telephone sets and for applications in relay, high-speed and line transformer drivers.
PINNING - SOT223 PIN 1 2 3 4 gate drain source drain Fig.
1 Simplified outline (SOT223) and symbol.
DESCRIPTION QUICK REFERENCE DATA SYMBOL VDS ID RDS(on) VGS(th) PARAMETER drain-source voltage DC drain current drain-source on-resistance gate-source threshold voltage BSP122 MAX.
200 550 2.
5 2 V UNIT mA Ω V handbook, halfpage 4 d g 1 Top view 2 3 MAM054 s LIMITING VALUES In accordance with th...


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