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BSP107

NXP
Part Number BSP107
Manufacturer NXP
Description N-channel enhancement mode vertical D-MOS transistor
Published Mar 23, 2005
Detailed Description DISCRETE SEMICONDUCTORS DATA SHEET BSP107 N-channel enhancement mode vertical D-MOS transistor Product specification Fi...
Datasheet PDF File BSP107 PDF File

BSP107
BSP107

Overview
DISCRETE SEMICONDUCTORS DATA SHEET BSP107 N-channel enhancement mode vertical D-MOS transistor Product specification File under Discrete Semiconductors, SC13b April 1995 Philips Semiconductors Product specification N-channel enhancement mode vertical D-MOS transistor FEATURES • Direct interface to C-MOS, TTL, etc.
due to low threshold voltage • High-speed switching • No secondary breakdown.
DESCRIPTION N-channel enhancement mode vertical D-MOS transistor in a miniature SOT223 envelope.
Intended for use as a line current interruptor in telephone sets and for applications in relay, high-speed and line transformer driver switching.
PINNING - SOT223 PIN 1 2 3 4 gate drain source drain Fig.
1 Simplified outline and symbol.
DESCRIPTION 1 Top view 2 3 MAM054 BSP107 QUICK REFERENCE DATA SYMBOL VDS VGS(th) ID RDS(on) PARAMETER drain-source voltage (DC) gate-source threshold voltage drain current (DC) drain-source on-state resistance MAX.
200 2.
4 200 28 V V mA Ω UNIT handbook, halfpage 4 d g s April 1995 2 Philips Semiconductors Product specification N-channel enhancement mode vertical D-MOS transistor LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL VDS ±VGSO ID IDM Ptot Tstg Tj PARAMETER drain-source voltage gate-source voltage drain current drain current total power dissipation storage temperature range operating junction temperature open drain DC peak up to Tamb = 25 °C CONDITIONS MIN.
− − − − − −65 − MAX.
200 20 200 350 1.
5 150 150 BSP107 UNIT V V mA mA W °C °C THERMAL RESISTANCE SYMBOL Rth j-a Note 1.
Device mounted on an epoxy printed circuit board, 40 mm × 40 mm × 1.
5 mm.
Mounting pad for the drain lead minimum 6 cm2.
PARAMETER from junction to ambient (note 1) VALUE 83.
3 K/W UNIT April 1995 3 Philips Semiconductors Product specification N-channel enhancement mode vertical D-MOS transistor CHARACTERISTICS Tj = 25 °C unless otherwise specified.
SYMBOL V(BR)DSS IDSS IDSX ±IGSS VGS(th) RDS(on) RDS(on) | Yf...


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