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BSP100

NXP
Part Number BSP100
Manufacturer NXP
Description N-channel enhancement mode TrenchMOS transistor
Published Mar 23, 2005
Detailed Description Philips Semiconductors Product specification N-channel enhancement mode TrenchMOS™ transistor FEATURES • ’Trench’ tech...
Datasheet PDF File BSP100 PDF File

BSP100
BSP100

Overview
Philips Semiconductors Product specification N-channel enhancement mode TrenchMOS™ transistor FEATURES • ’Trench’ technology • Low on-state resistance • Fast switching • High thermal cycling performance • Low thermal resistance BSP100 SYMBOL d QUICK REFERENCE DATA VDSS = 30 V ID = 6 A g RDS(ON) ≤ 100 mΩ (VGS = 10 V) RDS(ON) ≤ 200 mΩ (VGS = 4.
5 V) s GENERAL DESCRIPTION N-channel enhancement mode field-effect transistor in a plastic envelope using ’trench’ technology.
Applications:• Motor and relay drivers • d.
c.
to d.
c.
converters • Logic level translator The BSP100 is supplied in the SOT223 surface mounting package.
PINNING PIN 1 2 3 4 gate drain source drain (tab) DESCRIPTION SOT223 4 1 2 3 LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER VDSS VDGR VGS ID IDM PD Tj, Tstg Drain-source voltage Drain-gate voltage Gate-source voltage Continuous drain current Pulsed drain current Total power dissipation Operating junction and storage temperature CONDITIONS Tj = 25 ˚C to 150˚C Tj = 25 ˚C to 150˚C; RGS = 20 kΩ Tsp = 25 ˚C Tsp = 100 ˚C Tamb = 25 ˚C Tsp = 25 ˚C Tsp = 25 ˚C MIN.
- 65 MAX.
30 30 ± 20 61 4.
4 3.
2 24 8.
3 150 UNIT V V V A A A A W ˚C THERMAL RESISTANCES SYMBOL Rth j-sp Rth j-amb PARAMETER Thermal resistance junction to solder point Thermal resistance junction to ambient CONDITIONS surface mounted, FR4 board surface mounted, FR4 board TYP.
12 70 MAX.
15 UNIT K/W K/W 1 Continuous current rating limited by package February 1999 1 Rev 1.
000 Philips Semiconductors Product specification N-channel enhancement mode TrenchMOS™ transistor AVALANCHE ENERGY LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER EAS IAS Non-repetitive avalanche energy Non-repetitive avalanche current CONDITIONS Unclamped inductive load, IAS = 6 A; tp = 0.
2 ms; Tj prior to avalanche = 25˚C; VDD ≤ 15 V; RGS = 50 Ω; VGS = 10 V MIN.
- BSP100 MAX.
23 6 UNIT mJ A ELECTRIC...


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