DatasheetsPDF.com

BSP123

Siemens Semiconductor Group
Part Number BSP123
Manufacturer Siemens Semiconductor Group
Description SIPMOS Small-Signal Transistor (N channel Enhancement mode Logic Level)
Published Mar 23, 2005
Detailed Description BSP 123 SIPMOS ® Small-Signal Transistor • N channel • Enhancement mode • Logic Level • VGS(th) = 0.8...2.0V Pin 1 G T...
Datasheet PDF File BSP123 PDF File

BSP123
BSP123

Overview
BSP 123 SIPMOS ® Small-Signal Transistor • N channel • Enhancement mode • Logic Level • VGS(th) = 0.
8.
.
.
2.
0V Pin 1 G Type BSP 123 Type BSP 123 Pin 2 D Pin 3 S Pin 4 D VDS 100 V ID 0.
38 A RDS(on) 6Ω Package SOT-223 Marking BSP 123 Ordering Code Q67000-S306 Tape and Reel Information E6327 Maximum Ratings Parameter Drain source voltage Drain-gate voltage Symbol Values 100 100 Unit V VDS VDGR VGS Vgs ID RGS = 20 kΩ Gate source voltage Gate-source peak voltage,aperiodic Continuous drain current ± 14 ± 20 A 0.
38 TA = 29 °C DC drain current, pulsed IDpuls 0.
68 TA = 25 °C Power dissipation Ptot 1.
7 W TA = 25 °C Semiconductor Group 1 Sep-12-1996 BSP 123 Maximum Ratings Parameter Chip or operating temperature Storage temperature Thermal resistance, chip to ambient air Therminal resistance, junction-soldering point 1) DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 Symbol Values -55 .
.
.
+ 150 -55 .
.
.
+ 150 ≤ 72 ≤ 12 E 55 / 150 / 56 K/W Unit °C Tj Tstg RthJA RthJS 1) Transistor on epoxy pcb 40 mm x 40 mm x 1,5 mm with 6 cm2 copper area for drain connection Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min.
Static Characteristics Drain- source breakdown voltage Values typ.
max.
Unit V(BR)DSS 100 1.
5 0.
1 10 10 4 6 2 1 100 10 50 V VGS = 0 V, ID = 0.
25 mA, Tj = 25 °C Gate threshold voltage VGS(th) 0.
8 VGS=VDS, ID = 1 mA Zero gate voltage drain current IDSS µA nA nA Ω 6 10 VDS = 100 V, VGS = 0 V, Tj = 25 °C VDS = 100 V, VGS = 0 V, Tj = 125 °C VDS = 20 V, VGS = 0 V, Tj = 25 °C Gate-source leakage current IGSS RDS(on) VGS = 20 V, VDS = 0 V Drain-Source on-state resistance VGS = 10 V, ID = 0.
38 A VGS = 4.
5 V, ID = 0.
38 A Semiconductor Group 2 Sep-12-1996 BSP 123 Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min.
Dynamic Characteristics Transconductance Values typ.
max.
Unit gfs 0.
08 0.
28 65 10 4 - S pF 85 15 6 ns 5 8 VDS≥ 2 * ID * RDS(on)max...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)