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BSP108

NXP
Part Number BSP108
Manufacturer NXP
Description N-channel enhancement mode vertical D-MOS transistor
Published Mar 23, 2005
Detailed Description DISCRETE SEMICONDUCTORS DATA SHEET BSP108 N-channel enhancement mode vertical D-MOS transistor Product specification Fi...
Datasheet PDF File BSP108 PDF File

BSP108
BSP108


Overview
DISCRETE SEMICONDUCTORS DATA SHEET BSP108 N-channel enhancement mode vertical D-MOS transistor Product specification File under Discrete Semiconductors, SC13b April 1995 Philips Semiconductors Product specification N-channel enhancement mode vertical D-MOS transistor DESCRIPTION N-channel enhancement mode vertical D-MOS transistor in a miniature SOT223 envelope and intended for use in relay, high-speed and line-transformer drivers.
FEATURES • Direct interface to C-MOS, TTL, etc.
• High-speed switching • No secondary breakdown PINNING - SOT223 1 2 3 4 = gate = drain = source = drain ID = 500 mA; VGS = 10 V Transfer admittance ID = 500 mA; VDS = 15 V  Yfs  RDS(on) QUICK REFERENCE DATA Drain-source voltage Gate-source voltage (open drain) Drain current (DC) Total power dissipation up to Tamb = 25 °C Drain-source ON-resistance VDS ± VGSO ID Ptot BSP108 max.
max.
max.
max.
typ.
max.
80 V 20 V 500 mA 1.
5 W 2.
0 Ω 3.
0 Ω min.
typ.
150 mS 300 mS Marking code BSP108 PIN CONFIGURATION handbook, halfpage 4 d g 1 Top view 2 3 MAM054 s Fig.
1 Simplified outline and symbol.
April 1995 2 Philips Semiconductors Product specification N-channel enhancement mode vertical D-MOS transistor RATINGS Limiting values in accordance with the Absolute Maximum System (IEC 134) Drain-source voltage Gate-source voltage (open drain) Drain current (DC) Drain current (peak) Total power dissipation up to Tamb = 25 °C (note 1) Storage temperature range Junction temperature THERMAL RESISTANCE From junction to ambient (note 1) Note Rth j-a = VDS ± VGSO ID IDM Ptot Tstg Tj max.
max.
max.
max.
max.
max.
BSP108 80 V 20 V 500 mA 1.
0 A 1.
5 W 150 °C −65 to + 150 °C 83.
3 K/W 1.
Device mounted on an epoxy printed-circuit board 40 mm × 40 mm × 1.
5 mm; mounting pad for the collector lead min.
6 cm2.
CHARACTERISTICS Tj = 25 °C unless otherwise specified Drain-source breakdown voltage ID = 10 µA; VGS = 0 Gate threshold voltage ID = 1 mA; VGS = VDS Gate-source leakage current ± VGS = 20 V; ...


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