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BSP110

NXP
Part Number BSP110
Manufacturer NXP
Description N-channel enhancement mode vertical D-MOS transistor
Published Mar 23, 2005
Detailed Description DISCRETE SEMICONDUCTORS DATA SHEET BSP110 N-channel enhancement mode vertical D-MOS transistor Product specification Fi...
Datasheet PDF File BSP110 PDF File

BSP110
BSP110

Overview
DISCRETE SEMICONDUCTORS DATA SHEET BSP110 N-channel enhancement mode vertical D-MOS transistor Product specification File under Discrete Semiconductors, SC13b April 1995 Philips Semiconductors Product specification N-channel enhancement mode vertical D-MOS transistor DESCRIPTION N-channel enhancement mode vertical D-MOS transistor in a miniature SOT223 envelope and designed for use in telephone ringer circuits and for application in relay, high-speed and line transformer drivers.
FEATURES • Direct interface to C-MOS, TTL, etc.
• High-speed switching • No secondary breakdown PINNING - SOT223 1 = gate 2 = drain 3 = source 4 = drain MARKING CODE BSP110 PIN CONFIGURATION QUICK REFERENCE DATA Drain-source voltage Drain source voltage (non-repetitive peak; tp ≤ 2 ms) Gate-source voltage (open drain) Drain current (DC) Total power dissipation up to Tamb = 25 °C Drain-source ON-resistance ID = 200 mA; VGS = 10 V Transfer admittance ID = 200 mA; VDS = 15 V  Yfs  min.
typ.
RDS(on) VDS(SM) ± VGSO ID Ptot VDS BSP110 max.
max.
max.
max.
max.
typ.
max.
80 V 100 V 20 V 325 mA 1.
5 W 4.
5 Ω 7 Ω 75 mS 150 mS handbook, halfpage 4 d g 1 Top view 2 3 MAM054 s Fig.
1 Simplfied outline and symbol.
April 1995 2 Philips Semiconductors Product specification N-channel enhancement mode vertical D-MOS transistor RATINGS Limiting values in accordance with the Absolute Maximum System (IEC 134) Drain-source voltage Drain-source voltage (non-repetitive peak; tp ≤ 2 ms) Gate-source voltage (open drain) Drain current (DC) Drain current (peak) Total power dissipation up to Tamb = 25 °C (note 1) Storage temperature range Junction temperature THERMAL RESISTANCE From junction to ambient (note 1) Note Rth j-a = VDS(SM) ± VGSO ID IDM Ptot Tstg Tj max.
max.
max.
max.
max.
max.
VDS max.
BSP110 80 V 100 V 20 V 325 mA 650 mA 1.
5 W 150 °C −65 to + 150 °C 83.
3 K/W 1.
Device mounted on an epoxy printed-circuit board 40 mm × 40 mm × 1.
5 mm; mounting pad for the drain lead min.
6 cm2.
CHARAC...


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