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BSP120

NXP
Part Number BSP120
Manufacturer NXP
Description N-channel enhancement mode vertical D-MOS transistor
Published Mar 23, 2005
Detailed Description DISCRETE SEMICONDUCTORS DATA SHEET BSP120 N-channel enhancement mode vertical D-MOS transistor Product specification Fi...
Datasheet PDF File BSP120 PDF File

BSP120
BSP120

Overview
DISCRETE SEMICONDUCTORS DATA SHEET BSP120 N-channel enhancement mode vertical D-MOS transistor Product specification File under Discrete Semiconductors, SC13b April 1995 Philips Semiconductors Product specification N-channel enhancement mode vertical D-MOS transistor DESCRIPTION N-channel enhancement mode vertical D-MOS transistor in a miniature SOT223 envelope and designed for use as a line current interrupter in telephone sets and for application in relay, high-speed and line-transformer drivers.
FEATURES • Direct interface to C-MOS, TTL, etc.
• High-speed switching • No secondary breakdown QUICK REFERENCE DATA Drain-source voltage Drain-current (DC) Drain-source ON-resistance ID = 250 mA; VGS = 10 V Gate threshold voltage PINNING - SOT223 1 = gate 2 = drain 3 = source 4 = drain Marking code BSP120 PIN CONFIGURATION RDS(on) VGS(th) typ.
max.
max.
VDS ID max.
max.
BSP120 200 V 250 mA 7 Ω 12 Ω 2.
8 V handbook, halfpage 4 d g 1 Top view 2 3 MAM054 s Fig.
1 Simplified outline and symbol.
April 1995 2 Philips Semiconductors Product specification N-channel enhancement mode vertical D-MOS transistor RATINGS Limiting values in accordance with the Absolute Maximum System (IEC 134) Drain-source voltage Gate-source voltage (open drain) Drain current (DC) Drain current (peak) Total power dissipation up to Tamb = 25 °C (note 1) Storage temperature range Junction temperature THERMAL RESISTANCE From junction to ambient (note 1) Note Rth j-a = VDS ±VGSO ID IDM Ptot Tstg Tj max.
max.
max.
max.
max.
max.
200 V 20 V 250 mA 800 mA 1.
5 W −65 to + 150 °C 150 °C BSP120 83.
3 K/W 1.
Device mounted on an epoxy printed-circuit board 40 mm × 40 mm × 1.
5 mm; mounting pad for the drain lead min.
6 cm2.
CHARACTERISTICS Tj = 25 °C unless otherwise specified Drain-source breakdown voltage ID = 10 µA; VGS = 0 Drain-source leakage current VDS =160 V; VGS = 0 Gate-source leakage current VGS = 20 V; VDS = 0 Drain-source ON-resistance (see Fig.
4) ID = 250 mA; VGS = 10 V Gate threshol...


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