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BSP106

NXP
Part Number BSP106
Manufacturer NXP
Description N-channel enhancement mode vertical D-MOS transistor
Published Mar 23, 2005
Detailed Description DISCRETE SEMICONDUCTORS DATA SHEET BSP106 N-channel enhancement mode vertical D-MOS transistor Product specification Fi...
Datasheet PDF File BSP106 PDF File

BSP106
BSP106

Overview
DISCRETE SEMICONDUCTORS DATA SHEET BSP106 N-channel enhancement mode vertical D-MOS transistor Product specification File under Discrete Semiconductors, SC13b April 1995 Philips Semiconductors Product specification N-channel enhancement mode vertical D-MOS transistor FEATURES • Very low RDS(on) • Direct interface to C-MOS, TTL, etc.
• High-speed switching • No secondary breakdown.
DESCRIPTION N-channel enhancement mode vertical D-MOS transistor in a miniature SOT223 envelope and intended for use in relay, high-speed and line transformer drivers.
PINNING - SOT223 PIN 1 2 3 4 gate drain source drain 1 Top view 2 3 MAM054 BSP106 QUICK REFERENCE DATA SYMBOL VDS ID RDS(on) VGS(th) PARAMETER drain-source voltage drain current drain-source on-resistance gate-source threshold voltage CONDITIONS − DC value ID = 200 mA VGS = 10 V ID = 1 mA VGS = VDS MAX.
60 425 4 3 UNIT V mA Ω V PIN CONFIGURATION handbook, halfpage 4 d DESCRIPTION g s Fig.
1 Simplified outline and symbol.
April 1995 2 Philips Semiconductors Product specification N-channel enhancement mode vertical D-MOS transistor LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134).
SYMBOL VDS VDG ±VGSO ID IDM Ptot Tstg Tj PARAMETER drain-source voltage drain-gate voltage gate-source voltage drain current drain current total power dissipation storage temperature range junction temperature DC value peak value up to Tamb = 25 °C (note 1) CONDITIONS MIN.
− − − − − − −55 − BSP106 MAX.
60 60 20 425 850 1.
5 150 150 UNIT V V V mA mA W °C °C THERMAL RESISTANCE SYMBOL Rth j-a Note 1.
Device mounted on an epoxy printed-circuit board 40 x 40 x 1.
5 mm; mounting pad for the drain lead minimum 6 cm2.
from junction to ambient (note 1) PARAMETER VALUE 83.
3 UNIT K/W April 1995 3 Philips Semiconductors Product specification N-channel enhancement mode vertical D-MOS transistor CHARACTERISTICS Tj = 25 °C unless otherwise specified.
SYMBOL V(BR)DSS IDSS PARAMETER drain-source breakdown voltage drain-sour...


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