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BSP121

NXP
Part Number BSP121
Manufacturer NXP
Description N-channel enhancement mode vertical D-MOS transistor
Published Mar 23, 2005
Detailed Description DISCRETE SEMICONDUCTORS DATA SHEET BSP121 N-channel enhancement mode vertical D-MOS transistor Product specification Su...
Datasheet PDF File BSP121 PDF File

BSP121
BSP121

Overview
DISCRETE SEMICONDUCTORS DATA SHEET BSP121 N-channel enhancement mode vertical D-MOS transistor Product specification Supersedes data of April 1995 File under Discrete Semiconductors, SC13b 1998 Apr 01 Philips Semiconductors Product specification N-channel enhancement mode vertical D-MOS transistor DESCRIPTION N-channel enhancement mode vertical D-MOS transistor in a miniature SOT223 envelope and designed for use as a line current interrupter in telephone sets and for application in relay, high-speed and line-transformer drivers.
FEATURES • Direct interface to C-MOS, TTL, etc.
• High-speed switching • No secondary breakdown PINNING - SOT223 1 = gate 2 = drain 3 = source 4 = drain Marking code BSP121 Transfer admittance ID = 400 mA; VDS = 25 V  Yfs  min.
typ.
QUICK REFERENCE DATA Drain source voltage Gate-source voltage (open drain) Drain current (DC) Total power dissipation up to Tamb = 25 °C Drain-source on-resistance ID = 400 mA; VGS = 10 V RDS(on) typ.
max.
Ptot max.
VDS ±VGSO ID max.
max.
max.
BSP121 200 V 20 V 350 mA 1.
5 W 4.
5 Ω 6.
0 Ω 200 mS 350 mS PIN CONFIGURATION handbook, halfpage 4 d g 1 Top view 2 3 MAM054 s Fig.
1 Simplified outline and symbol.
1998 Apr 01 2 Philips Semiconductors Product specification N-channel enhancement mode vertical D-MOS transistor RATINGS Limiting values in accordance with the Absolute Maximum System (IEC 134) Drain-source voltage Gate-source voltage (open drain) Drain current (DC) Drain current (peak) Total power dissipation up to Tamb = 25 °C (note 1) Storage temperature range Junction temperature THERMAL RESISTANCE From junction to ambient (note 1) Note Rthj-a = Ptot Tstg Tj max.
max.
VDS ±VGSO ID IDM max.
max.
max.
max.
BSP121 200 V 20 V 350 mA 1.
2 A 1.
5 W 150 °C −65 to + 150 °C 83.
3 K/W 1.
Device mounted on an epoxy printed-circuit board 40 mm × 40 mm × 1.
5 mm; mounting pad for the drain lead min.
6 cm2.
1998 Apr 01 3 Philips Semiconductors Product specification N-channel enhancement mode vertical ...


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