BSP52
BSP52
NPN Darlington
Transistor
• This device is designed for applications requiring extremly high current gain at collector currents to 500mA.
• Sourced from process 03.
2 1 4
3
SOT-223
1.
Base 2.
Collector 3.
Emitter
Absolute Maximum Ratings* TA=25°C unless otherwise noted
Symbol VCES VCBO VEBO IC TJ, TSTG Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous Operating and Storage Junction Temperature Range Value 80 90 5 800 - 55 ~ +150 Units V V V mA °C
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES: 1) These ratings are based on a maximum junction te...