March 1998
FDC633N N-Channel Enhancement Mode Field Effect
Transistor
General Description
This N-Channel enhancement mode power field effect
transistors is produced using Fairchild's proprietary, high cell density, DMOS technology.
This very high density process is tailored to minimize on-state resistance.
These devices are particularly suited for low voltage applications in notebook computers, portable phones, PCMICA cards, and other battery powered circuits where fast switching,low in-line power loss and resistance to transients are needed in a very small outline surface mount package.
Features
5.
2 A, 30 V.
RDS(ON) = 0.
042 Ω @ VGS = 4.
5 V RDS(ON) = 0.
054 Ω @ VGS = 2.
5 V.
SuperSOTTM-6 pac...