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FDC6302P

Fairchild Semiconductor
Part Number FDC6302P
Manufacturer Fairchild Semiconductor
Description Digital FET/ Dual P-Channel
Published Mar 30, 2005
Detailed Description October 1997 FDC6302P Digital FET, Dual P-Channel General Description These Dual P-Channel logic level enhancement mode...
Datasheet PDF File FDC6302P PDF File

FDC6302P
FDC6302P

Overview
October 1997 FDC6302P Digital FET, Dual P-Channel General Description These Dual P-Channel logic level enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology.
This very high density process is especially tailored to minimize on-state resistance.
This device has been designed especially for low voltage applications as a replacement for digital transistors in load switchimg applications.
Since bias resistors are not required this one P-Channel FET can replace several digital transistors with different bias resistors like the IMBxA series.
Features -25 V, -0.
12 A continuous, -0.
5 A Peak.
R DS(ON) = 13 Ω @ VGS= -2.
7 V R DS(ON) = 10 Ω @ VGS = -4.
5 V.
Very low level gate drive requirements allowing direct operation in 3V circuits.
VGS(th) < 1.
5V.
Gate-Source Zener for ESD ruggedness.
>6kV Human Body Model Replace multiple PNP digital transistors (IMHxA series) with one DMOS FET.
SOT-23 SuperSOTTM-6 SuperSOTTM-8 SO-8 SOT...


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