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FDC6306P

Fairchild Semiconductor
Part Number FDC6306P
Manufacturer Fairchild Semiconductor
Description Dual P-Channel 2.5V Specified PowerTrench MOSFET
Published Mar 30, 2005
Detailed Description FDC6306P February 1999 FDC6306P Dual P-Channel 2.5V Specified PowerTrench™ MOSFET General Description These P-Channel ...
Datasheet PDF File FDC6306P PDF File

FDC6306P
FDC6306P

Overview
FDC6306P February 1999 FDC6306P Dual P-Channel 2.
5V Specified PowerTrench™ MOSFET General Description These P-Channel 2.
5V specified MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for superior switching performance.
These devices have been designed to offer exceptional power dissipation in a very small footprint for applications where the bigger more expensive SO-8 and TSSOP-8 packages are impractical.
Features • -1.
9 A, -20 V.
RDS(on) = 0.
170 Ω @ VGS = -4.
5 V RDS(on) = 0.
250Ω @ VGS = -2.
5 V • • • • Low gate charge (3 nC typical).
Fast switching speed.
High performance trench technology for extremely low RDS(ON).
SuperSOTTM-6 package: small footprint (72% smaller than standard SO-8); low profile (1mm thick).
Applications • Load switch • Battery protection • Power management D2 S1 D1 4 3 5 2 G2 SuperSOT TM -6 S2 G1 TA = 25°C unless otherwise ...


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