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FDC6303N

Fairchild Semiconductor
Part Number FDC6303N
Manufacturer Fairchild Semiconductor
Description Dual N-Channel Digital FET
Published Mar 30, 2005
Detailed Description August 1997 FDC6303N Digital FET, Dual N-Channel General Description These dual N-Channel logic level enhancement mode ...
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FDC6303N
FDC6303N

Overview
August 1997 FDC6303N Digital FET, Dual N-Channel General Description These dual N-Channel logic level enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology.
This very high density process is especially tailored to minimize on-state resistance.
This device has been designed especially for low voltage applications as a replacement for digital transistors in load switching applications.
Since bias resistors are not required this one N-Channel FET can replace several digital transistors with different bias resistors like the IMHxA series.
Features 25 V, 0.
68 A continuous, 2 A Peak.
RDS(ON) = 0.
6 Ω @ VGS = 2.
7 V RDS(ON) = 0.
45 Ω @ VGS= 4.
5 V.
Very low level gate drive requirements allowing direct operation in 3V circuits.
VGS(th) < 1.
5 V.
Gate-Source Zener for ESD ruggedness.
>6kV Human Body Model Replace multiple NPN digital transistors (IMHxA series) with one DMOS FET.
SOT-23 SuperSOTTM-6 SuperSOTTM-8 SO-8 SOT-223 SOIC-16 Mark: .
303 4 3 5 2 6 1 Absolute Maximum Ratings Symbol VDSS VGSS ID PD TJ,TSTG ESD Parameter Drain-Source Voltage Gate-Source Voltage Drain Current T A = 25°C unless otherwise noted FDC6303N 25 8 - Continuous - Pulsed 0.
68 2 (Note 1a) (Note 1b) Units V V A Maximum Power Dissipation 0.
9 0.
7 -55 to 150 6.
0 W Operating and Storage Temperature Range Electrostatic Discharge Rating MIL-STD-883D Human Body Model (100pf / 1500 Ohm) °C kV THERMAL CHARACTERISTICS RθJA RθJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case (Note 1a) (Note 1) 140 60 °C/W °C/W © 1997 Fairchild Semiconductor Corporation FDC6303N Rev.
C DMOS Electrical Characteristics (TA = 25 OC unless otherwise noted ) Symbol Parameter Conditions Min Typ Max Units OFF CHARACTERISTICS BVDSS Drain-Source Breakdown Voltage Breakdown Voltage Temp.
Coefficient Zero Gate Voltage Drain Current VGS = 0 V, ID = 250 µA ID = 250 µA, Referenced to 25 o C VDS = 20 V, VGS = 0 V TJ = 55°C IG...


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