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FDC6301N

ON Semiconductor
Part Number FDC6301N
Manufacturer ON Semiconductor
Description Dual N-Channel Digital FET
Published Dec 12, 2021
Detailed Description Dual, N-Channel, Digital FET FDC6301N General Description These dual N−Channel logic level enhancement mode field effect...
Datasheet PDF File FDC6301N PDF File

FDC6301N
FDC6301N

Overview
Dual, N-Channel, Digital FET FDC6301N General Description These dual N−Channel logic level enhancement mode field effect transistors are produced using onsemi’s proprietary, high cell density, DMOS technology.
This very high density process is especially tailored to minimize on−state resistance.
This device has been designed especially for low voltage applications as a replacement for digital transistors.
Since bias resistors are not required, these N−Channel FET’s can replace several digital transistors, with a variety of bias resistors.
Features • 25 V, 0.
22 A Continuous, 0.
5 A Peak ♦ RDS(on) = 5 W @ VGS = 2.
7 V ♦ RDS(on) = 4 W @ VGS = 4.
5 V • Very Low Level Gate Drive Requirements Allowing Direct Operation in 3 V Circuits.
VGS(th) < 1.
5 V • Gate−Source Zener for ESD Ruggedness.
>6 kV Human Body Model • This is a Pb−Free and Halide Free Device DATA SHEET www.
onsemi.
com D2 S1 D1 G2 G1S2 TSOT23 6−Lead SUPERSOTt−6 CASE 419BL MARKING DIAGRAM 301 MG G 1 301 = Specific Device Code M = Ass...


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