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FDC6304P

Fairchild Semiconductor
Part Number FDC6304P
Manufacturer Fairchild Semiconductor
Description Digital FET/ Dual P-Channel
Published Mar 30, 2005
Detailed Description July 1997 FDC6304P Digital FET, Dual P-Channel General Description These P-Channel enhancement mode field effect transi...
Datasheet PDF File FDC6304P PDF File

FDC6304P
FDC6304P

Overview
July 1997 FDC6304P Digital FET, Dual P-Channel General Description These P-Channel enhancement mode field effect transistor are produced using Fairchild's proprietary, high cell density, DMOS technology.
This very high density process is tailored to minimize on-state resistance at low gate drive conditions.
This device is designed especially for application in battery power applications such as notebook computers and cellular phones.
This device has excellent on-state resistance even at gate drive voltages as low as 2.
5 volts.
Features -25 V, -0.
46 A continuous, -1.
0 A Peak.
RDS(ON) = 1.
5 Ω @ VGS= -2.
7 V RDS(ON) = 1.
1 Ω @ VGS = -4.
5 V.
Very low level gate drive requirements allowing direct operation in 3V circuits.
VGS(th) < 1.
5 V.
Gate-Source Zener for ESD ruggedness.
>6kV Human Body Model.
SOT-23 SuperSOTTM-6 Mark: .
304 SuperSOTTM-8 SO-8 SOT-223 SOIC-16 4 3 5 2 6 1 Absolute Maximum Ratings Symbol VDSS VGSS ID PD TJ,TSTG ESD Parameter Drain-Source Voltage Gate-Source Vo...


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