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FDC6301N

Fairchild Semiconductor
Part Number FDC6301N
Manufacturer Fairchild Semiconductor
Description Dual N-Channel / Digital FET
Published Mar 30, 2005
Detailed Description July 1997 FDC6301N Dual N-Channel , Digital FET General Description These dual N-Channel logic level enhancement mode f...
Datasheet PDF File FDC6301N PDF File

FDC6301N
FDC6301N

Overview
July 1997 FDC6301N Dual N-Channel , Digital FET General Description These dual N-Channel logic level enhancement mode field effect transistors are produced using Fairchild 's proprietary, high cell density, DMOS technology.
This very high density process is especially tailored to minimize on-state resistance.
This device has been designed especially for low voltage applications as a replacement for digital transistors.
Since bias resistors are not required, these N-Channel FET's can replace several digital transistors, with a variety of bias resistors.
Features 25 V, 0.
22 A continuous, 0.
5 A Peak.
RDS(ON) = 5 Ω @ VGS= 2.
7 V RDS(ON) = 4 Ω @ VGS= 4.
5 V.
Very low level gate drive requirements allowing direct operation in 3V circuits.
VGS(th) < 1.
5V.
Gate-Source Zener for ESD ruggedness.
>6kV Human Body Model.
SOT-23 SuperSOTTM-6 Mark: .
301 SuperSOTTM-8 SO-8 SOT-223 SOIC-16 INVERTER APPLICATION Vcc 4 3 D OUT 5 6 2 IN G S GND 1 Absolute Maximum Ratings Symbol VDSS, VCC VGS...


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