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FDC6302P

ON Semiconductor
Part Number FDC6302P
Manufacturer ON Semiconductor
Description Dual P-Channel MOSFET
Published Dec 12, 2021
Detailed Description FDC6302P Digital FET, Dual P-Channel General Description These Dual P-Channel logic level enhancement mode field effect ...
Datasheet PDF File FDC6302P PDF File

FDC6302P
FDC6302P

Overview
FDC6302P Digital FET, Dual P-Channel General Description These Dual P-Channel logic level enhancement mode field effect transistors are produced using ON Semiconductor's proprietary, high cell density, DMOS technology.
This very high density process is especially tailored to minimize onstate resistance.
This device has been designed especially for low voltage applications as a replacement for digital transistors in load switchimg applications.
Since bias resistors are not required this one P-Channel FET can replace several digital transistors with different bias resistors like the IMBxA series.
Features -25 V, -0.
12 A continuous, -0.
5 A Peak.
RDS(ON) = 13 Ω @ VGS= -2.
7 V RDS(ON) = 10 Ω @ VGS = -4.
5 V.
Very low level gate drive requirements allowing direct operation in 3V circuits.
VGS(th) < 1.
5V.
Gate-Source Zener for ESD ruggedness.
>6kV Human Body Model Replace multiple PNP digital transistors (IMHxA series) with one DMOS FET.
SOT-23 SuperSOTTM-6 SuperSOTTM-8 SO-8 SOT-223 SOIC...


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