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FDC6305N

Fairchild Semiconductor
Part Number FDC6305N
Manufacturer Fairchild Semiconductor
Description Dual N-Channel MOSFET
Published Mar 30, 2005
Detailed Description FDC6305N March 1999 FDC6305N Dual N-Channel 2.5V Specified PowerTrenchTM MOSFET General Description These N-Channel lo...
Datasheet PDF File FDC6305N PDF File

FDC6305N
FDC6305N

Overview
FDC6305N March 1999 FDC6305N Dual N-Channel 2.
5V Specified PowerTrenchTM MOSFET General Description These N-Channel low threshold 2.
5V specified MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for superior switching performance.
Features • 2.
7 A, 20 V.
RDS(ON) = 0.
08 Ω @ VGS = 4.
5 V RDS(ON) = 0.
12 Ω @ VGS = 2.
5 V • • • • Low gate charge (3.
5nC typical).
Fast switching speed.
High performance trench technology for extremely low RDS(ON).
SuperSOTTM-6 package: small footprint (72% smaller than standard SO-8); low profile (1mm thick).
Applications • Load switch • DC/DC converter • Motor driving D2 S1 D1 5 2 4 3 G2 SuperSOT TM -6 S2 G1 TA = 25°C unless otherwise noted 6 1 Absolute Maximum Ratings Symbol VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed Parameter Ratings 20 (Note 1a) Units V V A W ±8 2.
7 8 0.
96 0.
9 0.
7 -55 to +150 Power Dissipation for Single Operation (Note 1a) (Note 1b) (Note 1c) TJ, Tstg Operating and Storage Junction Temperature Range °C °C/W °C/W Thermal Characteristics RθJA RθJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case (Note 1a) (Note 1) 130 60 Package Outlines and Ordering Information Device Marking .
305 ©1999 Fairchild Semiconductor Corporation Device FDC6305N Reel Size 7’’ Tape Width 8mm Quantity 3000 units FDC6305N, Rev.
C FDC6305N Electrical Characteristics Symbol BVDSS ∆BVDSS ∆TJ IDSS IGSSF IGSSR TA = 25°C unless otherwise noted Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse (Note 2) Test Conditions VGS = 0 V, ID = 250 µA ID = 250 µA, Referenced to 25°C VDS = 16 V, VGS = 0 V VGS = 8 V, VDS = 0 V VGS = -8 V, VDS = 0 V Min 20 Typ Max Units V Off Characteristics 14 ...


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