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FDC6304P

ON Semiconductor
Part Number FDC6304P
Manufacturer ON Semiconductor
Description Dual P-Channel MOSFET
Published Dec 12, 2021
Detailed Description FDC6304P Digital FET, Dual P-Channel General Description These P-Channel enhancement mode field effect transistor are pr...
Datasheet PDF File FDC6304P PDF File

FDC6304P
FDC6304P

Overview
FDC6304P Digital FET, Dual P-Channel General Description These P-Channel enhancement mode field effect transistor are produced using ON Semiconductor's proprietary, high cell density, DMOS technology.
This very high density process is tailored to minimize on-state resistance at low gate drive conditions.
This device is designed especially for application in battery power applications such as notebook computers and cellular phones.
This device has excellent on-state resistance even at gate drive voltages as low as 2.
5 volts.
Features -25 V, -0.
46 A continuous, -1.
0 A Peak.
RDS(ON) = 1.
5 Ω @ VGS= -2.
7 V RDS(ON) = 1.
1 Ω @ VGS = -4.
5 V.
Very low level gate drive requirements allowing direct operation in 3V circuits.
VGS(th) < 1.
5 V.
Gate-Source Zener for ESD ruggedness.
>6kV Human Body Model.
SOT-23 SuperSOTTM-6 Mark: .
304 SuperSOTTM-8 SO-8 SOT-223 SOIC-16 4 3 5 2 6 1 Absolute Maximum Ratings TA = 25oC unless other wise noted Symbol Parameter VDSS Drain-Source Voltage VGSS...


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