FDC634P September 2001 FDC634P P-Channel 2.
5V Specified PowerTrench® MOSFET General Description This P-Channel 2.
5V specified MOSFET uses Fairchild’s low voltage PowerTrench process.
It has been optimized for battery power management applications.
Applications • Battery management • Load switch • Battery protection Features • –3.
5 A, –20 V.
RDS(ON) = 80 mΩ @ VGS = –4.
5 V RDS(ON) = 110 mΩ @ VGS = –2.
5 V • Low gate charge (7.
2 nC typical) • High performance trench technology for extremely low RDS(ON) S D D SuperSOT TM-6 G D D Absolute Maximum Ratings TA=25oC unless otherwise noted Symbol VDSS V GSS ID Parameter Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous – Pul...

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