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Part Number
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FDD5680 |
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Manufacturer
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Fairchild Semiconductor |
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Description
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N-Channel/ PowerTrench MOSFET |
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Published
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Mar 30, 2005 |
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Detailed Description
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FDD5680
July 2000
FDD5680
N-Channel, PowerTrench MOSFET
General Description
This N-Channel MOSFET is produced using F...
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Datasheet
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FDD5680
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Overview
FDD5680
July 2000
FDD5680
N-Channel, PowerTrench MOSFET
General Description
This N-Channel MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.
Features • • •
38 A, 60 V.
RDS(on) = 0.
021 Ω @ VGS = 10 V RDS(on) = 0.
025 Ω @ VGS = 6 V.
Low gate charge (33nC typical).
Fast switching speed.
High performance trench technology for extremely low RDS(on).
Applications • •
DC/DC converter Motor drives
•
D
D G S
TO-252
S G
Absolute Maximum Ratings
Symbol
VDSS VGSS ID Drain-Source Voltage Gate-Source Voltage
TA=25 C unless otherwi...
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