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FDD5690

ON Semiconductor
Part Number FDD5690
Manufacturer ON Semiconductor
Description N-Channel MOSFET
Published Dec 22, 2023
Detailed Description FDD5690 FDD5690 60V N-Channel PowerTrench® MOSFET General Description This N-Channel MOSFET has been designed specific...
Datasheet PDF File FDD5690 PDF File

FDD5690
FDD5690

Overview
FDD5690 FDD5690 60V N-Channel PowerTrench® MOSFET General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.
These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications.
The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency.
Features • 30 A, 60 V.
RDS(ON) = 0.
027Ω @ VGS = 10 V RDS(ON) = 0.
032 Ω @ VGS = 6 V.
• Low gate charge (23nC typical).
• Fast switching speed.
• High performance trench technology for extremely low RDS(ON).
D D G G S TO-252 Absolute Maximum Ratings TC=25oC unless otherwise noted Symbol VDSS VGSS ID Parameter Drain-Source Voltage Gate-Source Voltage Maximum Drain Current -Continuous (Note 1) (Note 1a) PD TJ, Tstg Maximum Drain Current -Pulsed Maximum Power Dissipation @ TC = 25oC TA = 25oC TA = 25oC (Note 1) (Note 1a) (Note 1b) Operating and Storage Junction Temperature Range Thermal Characteristics RθJC Thermal Resistance, Junction-to- Case RθJA Thermal Resistance, Junction-to- Ambient (Note 1) (Note 1a) (Note 1b) S Ratings 60 ±20 30 9 100 50 3.
2 1.
3 -55 to +150 2.
5 40 96 Package Marking and Ordering Information Device Marking Device Reel Size FDD5690 FDD5690 13’’ Tape width 16mm Units V V A W °C °C/W °C/W °C/W Quantity 2500 2002 Semiconductor Components Industries, LLC.
October-2017, Rev.
3 Publication Order Number: FDD5690/D FDD5690 Electrical Characteristics Symbol Parameter TA = 25°C unless otherwise noted Test Conditions Min Typ Max Units Off Characteristics WDSS IAR Single Pulse Drain-Source Avalanche Energy VDD = 30 V, ID = 30 A Maximum Drain-Source Avalanche Current BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA 60 ∆BVDSS ∆TJ IDSS Breakdown Voltage Temperature Coefficient Zero Gate Voltage ...


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