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FDD5680

Fairchild Semiconductor
Part Number FDD5680
Manufacturer Fairchild Semiconductor
Description N-Channel/ PowerTrench MOSFET
Published Mar 30, 2005
Detailed Description FDD5680 July 2000 FDD5680 N-Channel, PowerTrench MOSFET General Description This N-Channel MOSFET is produced using F...
Datasheet PDF File FDD5680 PDF File

FDD5680
FDD5680

Overview
FDD5680 July 2000 FDD5680 N-Channel, PowerTrench MOSFET General Description This N-Channel MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.
Features • • • 38 A, 60 V.
RDS(on) = 0.
021 Ω @ VGS = 10 V RDS(on) = 0.
025 Ω @ VGS = 6 V.
Low gate charge (33nC typical).
Fast switching speed.
High performance trench technology for extremely low RDS(on).
Applications • • DC/DC converter Motor drives • D D G S TO-252 S G Absolute Maximum Ratings Symbol VDSS VGSS ID Drain-Source Voltage Gate-Source Voltage TA=25 C unless otherwise noted o Parameter Ratings 60 ±20 (Note 1) (Note 1a) Units V V A Maximun Drain Current - Continuous Maximum Drain Current - Pulsed 38 8.
5 100 60 2.
8 1.
3 -55 to +150 PD Maximum Power Dissipation @ TC = 25oC TA = 25oC TA = 25oC (Note 1) (Note 1a) (Note 1b) W TJ, Tstg Operating and Storage Junction Temperature Range °C Thermal Characteristics RθJC RθJA Thermal Resistance, Junction-to- Case Thermal Resistance, Junction-to- Ambient (Note 1) (Note 1b) 2.
1 96 °C/W °C/W Package Marking and Ordering Information Device Marking FDD5680 2000 Fairchild Semiconductor International Device FDD5680 Reel Size 13’’ Tape width 16mm Quantity 2500 FDD5680, Rev.
C FDD5680 Electrical Characteristics Symbol WDSS IAR BVDSS ∆BVDSS ∆TJ IDSS IGSSF IGSSR TA = 25°C unless otherwise noted Parameter Test Conditions Min Typ Max Units 140 38 mJ A V Off Characteristics Single Pulse Drain-Source VDD = 30 V, ID = 38 A Avalanche Energy Maximum Drain-Source Avalanche Current Drain-Source Breakdown VGS = 0 V, ID = 250 µA Voltage Breakdown Voltage ID = 250µA, Referenced to 25°C Temperature Coefficient Zero Gate Voltage Drain Current VDS = 48 V, VGS = 0 V Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse (Note 2) 60 60 1 100 -100 mV/°C µA nA nA VGS = 20V, VDS = 0 V V...


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