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FDD5680

Part Number FDD5680
Manufacturer Fairchild Semiconductor
Title N-Channel/ PowerTrench MOSFET
Description This N-Channel MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the o...
Features


• 38 A, 60 V. RDS(on) = 0.021 Ω @ VGS = 10 V RDS(on) = 0.025 Ω @ VGS = 6 V. Low gate charge (33nC typical). Fast switching speed. High performance trench technology for extremely low RDS(on). Applications

• DC/DC converter Motor drives
• D D G S TO-252 S G Absolute Maximum Ratings Symbol ...

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Datasheet FDD5680 PDF File







Similar Datasheet

FDD5680 : This N-Channel MOSFET is produced using ON Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. Applications • DC/DC converter • Motor drives Features • 38 A, 60 V. RDS(on) = 0.021 Ω @ VGS = 10 V RDS(on) = 0.025 Ω @ VGS = 6 V. • Low gate charge (33nC typical). • Fast switching speed. • High performance trench technology for extremely low RDS(on). D D G G S TO-252 Absolute Maximum Ratings TA=25oC unless otherwise noted Symbol VDSS VGSS ID PD TJ, Tstg Parameter Drain-Source Voltage Gate-Source Voltage Maximun Drain Current - Continuous (Note 1) (Note 1a) .




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